Switching of the Mott transition based on the hole-driven MIT theory

Hyun-Tak Kim; Bong-Jun Kim; Yong Wook Lee; Byung-Gyu Chae; Sun Jin Yun

doi:10.1016/j.physb.2007.10.188

Switching of the Mott transition based on the hole-driven MIT theory

Strongly Correlated Electrons 2008-05-02 v1 Materials Science

Authors: Hyun-Tak Kim , Bong-Jun Kim , Yong Wook Lee , Byung-Gyu Chae , Sun Jin Yun

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Abstract

Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the Peierls transition.

Keywords

metal-insulator transition vanadium dioxide phase transition

Cite

@article{arxiv.0804.2314,
  title  = {Switching of the Mott transition based on the hole-driven MIT theory},
  author = {Hyun-Tak Kim and Bong-Jun Kim and Yong Wook Lee and Byung-Gyu Chae and Sun Jin Yun},
  journal= {arXiv preprint arXiv:0804.2314},
  year   = {2008}
}

Comments

2 pages, 1 figure

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