Related papers: Antiferromagnetic Tunnel Junctions (AFMTJs) for In…

We introduce a fast and highly-efficient physically-realizable bit swap. Employing readily available and scalable Josephson junction microtechnology, the design implements the recently introduced paradigm of momentum computing. Its…

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that…

Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent…

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…

Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the domain-wall magnetic tunnel junction (DW-MTJ). The system…

Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at…

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions…

Multilayer edge molecular spintronics device (MEMSD) approach can produce novel logic and memory units for the computers. MEMSD are produced by bridging the molecular channels across the insulator, in the exposed edge region(s) of a…

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…

In combinatorial optimization, probabilistic Ising machines (PIMs) have gained significant attention for their acceleration of Monte Carlo sampling with the potential to reduce time-to-solution in finding approximate ground states. However,…

The spatiotemporal nature of neuronal behavior in spiking neural networks (SNNs) make SNNs promising for edge applications that require high energy efficiency. To realize SNNs in hardware, spintronic neuron implementations can bring…

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…

Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture…

Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally non-volatile long-term plasticity changes have been implemented in nanoelectronic synapses for neuromorphic…

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…

We propose to investigate flux qubits by the impedance measurement technique (IMT), currently used to determine the current--phase relation in Josephson junctions. We analyze in detail the case of a high-quality tank circuit coupled to a…

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…