Related papers: Antiferromagnetic Tunnel Junctions (AFMTJs) for In…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
We investigate tunnel ferromagnetic Josephson junctions based on Superconductor-Insulator-thin superconductor-Ferromagnet-Superconductor multilayers. A comparative study of their electrodynamic properties is performed for junctions with…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
We demonstrate a good agreement between mean dwell times measured in 50~nm diameter, perpendicularly magnetized superparamagnetic tunnel junctions (SMTJ), and theoretical predictions based on Langer's theory. Due to a large entropic…
Due to stringent thermal budgets in cryogenic technologies such as superconducting quantum computers and sensors, minimizing the energy dissipation and power consumption of cryogenic electronic components is pivotal for large-scale devices.…
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several…
Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…
This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access memories (STT-MRAMs) operating at the liquid nitrogen…
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the…
Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the…
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer…
Stochastic computing, a form of computation with probabilities, presents an alternative to conventional arithmetic units. Magnetic Tunnel Junctions (MTJs), which exhibit probabilistic switching, have been explored as Stochastic Number…