Related papers: Efficient and Robust p-type Transistor based on Ul…
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature,…
Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most…
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…
We present a model for P-N-P abrupt heterostructures vertical to temperature gradient to improve the thermoelectric performance. The P-N-P heterostructure is considered as an abrupt bipolar junction transistor due to an externally applied…
Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…
The significance of p-type transparent oxide semiconductors (TOS) in the semiconductor industry is paramount, driving advancements in optoelectronic technologies for transparent electronic devices with unique properties. The recent…
Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…
Transparent oxides are essential building blocks to many technologies, ranging from components in transparent electronics, transparent conductors, to absorbers and protection layers in photovoltaics and photoelectrochemical devices.…
Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from…
Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm…
The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrinsic n-type semiconductors due to electron donating which…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…
Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap…
Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…
Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly…
Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize…
In this work we discuss the zero temperature limit of a "p-wave" holographic superconductor. The bulk description consists of a non-Abelian SU(2) gauge fields minimally coupled to gravity. We numerically construct the zero temperature…
We have explored the mechanical, electronic, optical and thermoelectric properties of p-type half-Heusler compound BaAgP for the first time using density functional theory based calculations. The mechanical and dynamical stability of this…