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Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
In the systems ferromagnet/superconductor ([Fe, Ni]/In), the temperature dependent transport has been investigated within the temperature range including superconducting transition temperature for Indium. It has been found that when Indium…
Spin torques in magnetic multilayers are produced by spin polarization $P$ of ferromagnetic (F) layers, and increase with growing $P$. The latter, however, cannot exceed the $P=1$ value found in half metals. We study the $P=1$ case to find…
Magnetization reversal in exchange-spring magnet films has been investigated by a First Order Reversal Curve (FORC) technique and vector magnetometry. In Fe/epitaxial-SmCo films, the reversal proceeds by a reversible rotation of the Fe soft…
We show that the peculiarities of the electron band structure strongly affect the spin-valve effect in heterostructures consisting of a superconductor (S) and two ferromagnetic layers F1 and F2. For the S/F1/F2 systems the energy shift…
The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Here we report Josephson junctions based on epitaxial…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
The interface-induced magnetization damping of thin ferromagnetic films in contact with normal-metal layers is calculated from first principles for clean and disordered Fe/Au and Co/Cu interfaces. Interference effects arising from coherent…
Pulse-based studies of ferroelectric capacitor systems have been used by several groups to experimentally probe the mechanisms of apparent negative capacitance. In this paper, the behavior of such systems is modeled through SPICE simulation…
Understanding excitation and charge transfer in disordered media is a significant challenge in chemistry, biophysics and material science. We study two experimentally-relevant measures for carriers transfer in finite-size chains, the…
InAs on Insulator (InAsOI) has been recently demonstrated as a promising platform to develop hybrid semiconducting-superconducting Josephson Junctions (JJs) and Josephson Field Effect Transistors (JoFETs). The InAsOI consists of an InAs…
An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet…
Controlling the contamination of silicon materials by iron, especially dissolved interstitial iron (Fe$_{\mathrm{i}}$), is a longstanding problem with recent developments and several open issues. Among these we have the question whether…
The proximity effect in mesoscopic ferromagnet/superconductor ($FS$) Ni/Al structures of various geometries was studied experimentally on both $F$- and $S$-sides of the structures. Samples with a wide range of interface transparency were…
The effect of hydrostatic pressure on the electronic structures of iron pnictide superconducting compounds LiFeAs and NaFeAs through density functional theory based first principles studies are presented, using the predicted crystal…
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…