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Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2…

Mesoscale and Nanoscale Physics · Physics 2013-06-18 Han Liu , Mengwei Si , Sina Najmaei , Adam T. Neal , Yuchen Du , Pulickel M. Ajayan , Jun Lou , Peide D. Ye

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…

Materials Science · Physics 2016-05-02 Bilu Liu , Yuqiang Ma , Anyi Zhang , Liang Chen , Ahmad N. Abbas , Yihang Liu , Chenfei Shen , Haochuan Wan , Chongwu Zhou

Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, steep sub-threshold swing and high carrier mobility offered…

Applied Physics · Physics 2019-01-09 Ansh , Jeevesh Kumar , Ravi K Mishra , Srinivasan Raghavan , Mayank Shrivastava

Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all…

Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…

The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials due to…

Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

Mesoscale and Nanoscale Physics · Physics 2013-06-25 Branimir Radisavljevic , Andras Kis

Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit…

Mesoscale and Nanoscale Physics · Physics 2017-09-14 Guohua Wei , Erik J. Lenferink , David A. Czaplewski , Nathaniel P. Stern

The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…

We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 Y. Naveh , K. K. Likharev

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

Materials Science · Physics 2026-04-22 Chankeun Yoon , Juhan Ahn , Yuchen Zhou , Jaydeep P. Kulkarni , Ananth Dodabalapur

Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance…

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…

Mesoscale and Nanoscale Physics · Physics 2019-04-23 Marta Perucchini , Enrique G. Marin , Damiano Marian , Giuseppe Iannaccone , Gianluca Fiori

We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate…

Mesoscale and Nanoscale Physics · Physics 2021-08-25 Maksym V. Strikha , Mykola Yelisieiev , Anna N. Morozovska

Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many…

Materials Science · Physics 2014-01-21 Yongqing Cai , Zhaoqiang Bai , Hui Pan , Yuan Ping Feng , Boris I. Yakobson , Yong-Wei Zhang