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The ferromagnetic transition in a diluted magnetic semiconductor with localized charge carriers is inevitably a percolation transition. In this work we theoretically study the correlation between this magnetic percolation and transport…
The issue concerning the nature and the role of microstructural inhomogeneities in iron chalcogenide superconducting crystals of FeTe0.65Se0.35 and their correlation with transport properties of this system was addressed. Presented data…
Advances in epitaxy of transition metal oxides with perovskite structure allow novel insights into transport mechanisms of strongly correlated electron systems, which are of interest for future transparent electronics. In this study, we…
Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal (FM). A small change in the lon- gitudinal resistance of the bilayer has been…
A detailed investigation on the structural and magneto-transport properties of iron intercalated Bi2Se3 single crystals have been presented. The x-ray diffraction and Raman studies confirm the intercalation of Fe in the van der Waals gaps…
Unlike the ferropnictide superconductors, which crystallize in a tetragonal crystal structure, binary FeAs forms in an orthorhombic crystal structure, where the local atomic environment resembles a highly distorted variant of the FeAs4…
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the…
We report on the study of electron transport in the oxide heterostructures with superconductor/magnetic matter (S/M) interfaces where anomaly large penetration of superconducting correlations in magnetic matter (proximity effect) is…
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been…
Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering on the porous Si substrates, inherited their structure made…
The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of…
This paper reports the nanoscale texture and microstructure of a high-performance NdFeAs(O,F) superconducting thin film grown by molecular beam epitaxy on a textured MgO/Y$_2$O$_3$/Hastelloy substrate. The NdFeAs(O,F) film forms a highly…
Topological effects arising from the Berry curvature lead to intriguing transport signatures in quantum materials. Two such phenomena are the chiral anomaly and nonlinear Hall effect (NLHE). A unified description of these transport regimes…
We have investigated magnetic and transport properties of the {\it kagom\'{e}-bilayer} ferromagnet Fe$_{3}$Sn$_{2}$. A soft ferromagnetism and a large anomalous Hall effect are observed. The saturated Hall resistivity of Fe$_{3}$Sn$_{2}$ is…
We report the magnetic and electronic transport properties of the inversion and time-reversal symmetry breaking Weyl semimetal NdAlGe. This material is analogous to NdAlSi, whose helical magnetism presents a rare example of a Weyl-mediated…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
Magnetic tunnel junctions with a magnetic layer with perpendicular anisotropy are currently used in computer memories that do not require voltage sustaining. An example of layers with perpendicular magnetic anisotropy are ultrathin FeCo…
The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large…
A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on…
The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…