Related papers: Gate-tunable charge-spin interconversion in graphe…
The generation and control of spin currents are crucial for advancing next-generation spintronic technologies. These technologies depend on materials capable of efficiently sourcing and interconverting spin and charge currents, while…
The development of machine learning interatomic potentials has immensely contributed to the accuracy of simulations of molecules and crystals. However, creating interatomic potentials for magnetic systems that account for both magnetic…
Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be…
We consider graphene deposited on monolayers of such transition-metal dichalcogenides like MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$. Our key objective is to study the impact of relative twist angle between the monolayers on the…
Magnetic helix (MH) structure can be a role model for future spintronic devices. Utilizing the advantage of constructing possible magnetic configurations, in the present work first time we investigate spintronic behavior, to the best of our…
Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both…
The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently…
Quantum materials combining magnetism and topological fermions are a key platform for low-energy electronics, spintronics, and quantum phases that break time-reversal symmetry (TRS), such as the quantum anomalous Hall effect (QAHE).…
Recently orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of antiferromagnetic state in Mn3Sn/Cr, where despite the much…
A semi-classical description of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems. A heuristic model for the SHE is developed, starting with a fully quantum mechanical treatment, from which we…
The so-called spin-orbit proximity effect experimentally realized in graphene (G) on several different heavy metal surfaces opens a new perspective to engineer the spin-orbit coupling (SOC) for new generation spintronics devices. Here, via…
Interfaces between heavy metals (HMs) and antiferromagnetic insulators (AFIs) have recently become highly investigated and debated systems in the effort to create spintronic devices able to function at terahertz frequencies. Such…
By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and…
Antiferromagnetic spintronics focuses on investigating and using antiferromagnets as active elements in spintronics structures. Last decade advances in relativistic spintronics led to the discovery of the staggered, current-induced field in…
Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current…
Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone2, anomalous quantum…
The continuous need for miniaturization and increase in device speed exerts pressureon the electronics industry to explore new avenues of information processing. One possibility is to use the spin to store, manipulate and carry information.…
The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck…