Related papers: Gate-tunable charge-spin interconversion in graphe…
High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect (SHE) highly limits to d-orbital materials associated with strong…
Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of graphene-Sb2Te3 heterostructure…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…
In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes…
Spintronic nano-neurons offer a promising route towards energy-efficient, high-performance hardware neural networks thanks to their inherent low-input nonlinear dynamics. However, training such networks remains a major bottleneck as it…
The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics…
The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
Heterostructures of graphene in proximity to magnetic insulators open the possibility to investigate exotic states emerging from the interplay of magnetism, strain and charge transfer between the layers. Recent reports on the growth of…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and…
The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity…
We show how hydrogenation of graphene nanoribbons at small concentrations can open new venues towards carbon-based spintronics applications regardless of any especific edge termination or passivation of the nanoribbons. Density functional…
Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin…
The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in…
Spin-torque ferromagnetic resonance (ST-FMR) particularly using magnetic insulators and heavy metals possessing a giant spin Hall effect (SHE) has gotten a lot of attention for the development of spintronic devices. To devise complex…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling -stemming from…