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A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
Random networks of single-walled carbon nanotubes (CNTs) usually contain both metallic (m-CNTs) and semiconducting (s-CNTs) nanotubes with an approximate ratio of 1:2, which leads to a trade-off between on-conductance and on/off ratio. We…
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics…
We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native…
Carbon Nanotubes have shown to be an attractive option in the race to find a replacement to silicon-based transistors, due to its high electrical conductivity, extraordinary mechanical strength, and thermal conductivity. However, challenges…
Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical…
In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold and short channel performance is observed and presented. The…
Current approaches for electric power generation from nanoscale conducting or semi-conducting layers in contact with moving aqueous droplets are promising as they show efficiencies of around 30 percent, yet, even the most successful ones…
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
Core-shell germanium nanowire (GeNW) is formed with a single-crystalline Ge core and concentric shells of nitride and silicon passivation layer by chemical vapor deposition (CVD), an Al2O3 gate dielectric layer by atomic layer deposition…
Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement, threshold voltage (Vth) and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, a…
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors…
Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D…
This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree…
We propose and demonstrate a method for the construction of highly uniform, multilayered, orientation-controlled superstructures of CdSe/CdZnS core/shell colloidal nanoplatelets (NPLs) using bi-phase liquid interface. These atomically-flat…
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…
As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…