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In recent years, researchers have explored use of non-volatile devices such as STT-RAM (spin torque transfer RAM) for designing on-chip caches, since they provide high density and consume low leakage power. A common limitation of all…

This paper summarizes our work on experimental characterization and analysis of reduced-voltage operation in modern DRAM chips, which was published in SIGMETRICS 2017, and examines the work's significance and future potential. We take a…

In cost-sensitive deployments, RAID arrays may combine SSDs with different performance levels. Such heterogeneity arises when aging SSDs degrade yet remain usable, or when failed drives are replaced with new devices of explicitly better…

To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit…

Persistent Memory (PM) is a new storage technology thatbrings high performance, byte addressability, and persistency for a lesser cost than DRAM. Due to cache volatility and store reordering, developers must use explicit instructions (e.g.:…

Many performance critical systems today must rely on performance enhancements, such as multi-port memories, to keep up with the increasing demand of memory-access capacity. However, the large area footprints and complexity of existing…

In this paper we study the design issues in improving TCP performance over the ATM UBR service. ATM-UBR switches respond to congestion by dropping cells when their buffers become full. TCP connections running over UBR can experience low…

Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…

Poor DRAM technology scaling over the course of many years has caused DRAM-based main memory to increasingly become a larger system bottleneck. A major reason for the bottleneck is that data stored within DRAM must be moved across a…

In a modern GPU architecture, all threads within a warp execute the same instruction in lockstep. For a memory instruction, this can lead to memory divergence: the memory requests for some threads are serviced early, while the remaining…

In this paper, we quantify how much codes can reduce the data retrieval latency in storage systems. By combining a simple linear code with a novel request scheduling algorithm, which we call Blocking-one Scheduling (BoS), we show…

Caching is crucial for enabling high-throughput networks for data intensive applications. Traditional caching technology relies on DRAM, as it can transfer data at a high rate. However, DRAM capacity is subject to contention by most system…

Modern commercial-off-the-shelf (COTS) multicore processors have advanced memory hierarchies that enhance memory-level parallelism (MLP), which is crucial for high performance. To support high MLP, shared last-level caches (LLCs) are…

This paper summarizes our work on experimentally characterizing, mitigating, and recovering read disturb errors in multi-level cell (MLC) NAND flash memory, which was published in DSN 2015, and examines the work's significance and future…

The autoregressive nature of large language models (LLMs) fundamentally limits inference speed, as each forward pass generates only a single token and is often bottlenecked by memory bandwidth. Speculative decoding has emerged as a…

ATM-UBR switches respond to congestion by dropping cells when their buffers become full. TCP connections running over UBR experience low throughput and high unfairness. For 100% TCP throughput each switch needs buffers equal to the sum of…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…

This paper summarizes the idea of Tiered-Latency DRAM, which was published in HPCA 2013. The key goal of TL-DRAM is to provide low DRAM latency at low cost, a critical problem in modern memory systems. To this end, TL-DRAM introduces…

We propose a novel solid-state disk (SSD) architecture that utilizes a double-data-rate synchronous NAND flash interface for improving read and write performance. Unlike the conventional design, the data transfer rate in the proposed design…