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The speed of modern digital systems is severely limited by memory latency (the ``Memory Wall'' problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic--In--Memory (LiM)…

Massive off-chip accesses in GPUs are the main performance bottleneck, and we divided these accesses into three types: (1) Write, (2) Data-Read, and (3) Read-Only. Besides, We find that many writes are duplicate, and the duplication can be…

We propose overcoming the memory capacity limitation of GPUs with high-capacity Storage-Class Memory (SCM) and DRAM cache. By significantly increasing the memory capacity with SCM, the GPU can capture a larger fraction of the memory…

DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…

In this paper, we present a SRAM-PCM hybrid cache design, along with a cache replacement policy, named dead fast block (DFB) to manage the hybrid cache. This design aims to leverage the best features of both SRAM and PCM devices. Compared…

Our ISCA 2013 paper provides a fundamental empirical understanding of two major factors that make it very difficult to determine the minimum data retention time of a DRAM cell, based on the first comprehensive experimental characterization…

Modern deep neural network (DNN) applications integrate multiple DNN models into inference pipelines with stringent latency requirements for customized tasks. To mitigate extensive request timeouts caused by accumulation, systems for…

With the emergence of Non-Volatile Memories (NVMs) and their shortcomings such as limited endurance and high power consumption in write requests, several studies have suggested hybrid memory architecture employing both Dynamic Random Access…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…

Memory caches are being aggressively used in today's data-parallel frameworks such as Spark, Tez and Storm. By caching input and intermediate data in memory, compute tasks can witness speedup by orders of magnitude. To maximize the chance…

This paper summarizes the idea of ChargeCache, which was published in HPCA 2016 [51], and examines the work's significance and future potential. DRAM latency continues to be a critical bottleneck for system performance. In this work, we…

With lowering thresholds, transparently defending against Rowhammer within DRAM is challenging due to the lack of time to perform mitigation. Commercially deployed in-DRAM defenses like TRR that steal time from normal refreshes~(REF) to…

Persistent memory provides high-performance data persistence at main memory. Memory writes need to be performed in strict order to satisfy storage consistency requirements and enable correct recovery from system crashes. Unfortunately,…

The growing demand for efficient cloud storage solutions has led to the widespread adoption of Solid-State Drives (SSDs) for caching in cloud block storage systems. The management of data writes to SSD caches plays a crucial role in…

Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

Byte-addressable non-volatile main memory (NVM) demands transactional mechanisms to access and manipulate data on NVM atomically. Those transaction mechanisms often employ a logging mechanism (undo logging or redo logging). However, the…

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold (RDT) (e.g., the number of aggressor row activations…