To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit error rate (RBER), which can obtain the optimal write voltage by minimizing a cost function. In order to further improve the decoding performance of flash memory, we put forward a low-complexity entropy-based read-voltage optimization scheme, which derives the read voltages by searching for the optimal entropy value via a log-likelihood ratio (LLR)-aware cost function. Simulation results demonstrate the superiority of our proposed dynamic write-voltage design scheme and read-voltage optimization scheme with respect to the existing counterparts.
@article{arxiv.2209.01424,
title = {Dynamic Write-Voltage Design and Read-Voltage Optimization for MLC NAND Flash Memory},
author = {Runbin Cai and Yi Fang and Zhifang Shi and Lin Dai and Guojun Han},
journal= {arXiv preprint arXiv:2209.01424},
year = {2022}
}
Comments
12 pages, 6 figures, submitted to China Communication