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We propose and demonstrate a simple method to accurately monitor and program arbitrary states of partial crystallization in phase-change materials (PCMs). The method relies both on the optical absorption in PCMs as well as on the physics of…
It is shown that for thin metal films, thickness of which does not exceed a thickness of a skin-layer, the problem allows analytical solution for any boundary conditions. The analysis of transmission, reflection and absorption of an…
Atomic-layer and two-dimensional (2D) materials have emerged as essential building blocks for next-generation quantum and semiconductor technologies, where atomic-scale control over light-matter interactions is critical. However, their…
Chalcogenide-based optical phase change materials (OPCMs) exhibit a large contrast in refractive index when reversibly switched between their stable amorphous and crystalline states. OPCMs have rapidly gained attention due to their…
The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline…
Antimonene is a novel two-dimensional topological semiconductor material with strain driven tunable electronic structure for future electronic and spintronic devices, but the growth of clean antimonene is not fully understood. In this work,…
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between…
The behavior as a function of temperature of very thin films (10 to 200 nm) of pentylcyanobiphenyl (5CB) on silicon substrates is reported. In the vicinity of the nematic/isotropic transition we observe a coexistence of two regions of…
The non-linear and tunable optical constants of phase-change materials associated with their phase-switching have been utilized in reconfigurable optical devices. For example, one possible application of phase-change thin films is for…
This work proposes a new efficient approach for calculating the bending stiffness of two-dimensional materials using simple atomistic tests on small periodic unit cells. The tests are designed such that bending deformations are dominating…
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically…
The confinement of a superconductor in a thin film changes its Fermi-level density of states and is expected to change its critical temperature $T_c$. Previous calculations have reported large discontinuities of $T_c$ when the chemical…
We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…
When the dimension of a solid structure is reduced, there will be two emerging effects, quantum confinement and surface effect, which dominate at nanoscale. Based on first-principles calculations, we demonstrate that due to an intriguing…
Antimony sulfide is an emerging phase change material for optical and electrical memory and computation elements. It has additionally been reported as a ferroelectric, with recent evidence from hysteresis in piezoresponse force microscopy.…
Thin films of $\alpha$-MoGe show progressively reduced $T_{c}$'s as the thickness is decreased below 30 nm and the sheet resistance exceeds 100 $\Omega/\Box$. We have performed far-infrared transmission and reflection measurements for a set…
Phase change material (PCM) features distinct optical or electronic properties between amorphous and crystalline states. Recently, it starts to play a key role in the emerging photonic applications like optoelectronic display, dynamic…
Topological insulator films are promising materials for optoelectronics due to a strong optical absorption and a thickness dependent band gap of the topological surface states. They are superior candidates for photodetector applications in…
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling microscopy (STM), we demonstrate an atomically resolved lateral…
Phase-change materials (PCMs), which are well-established in optical and random-access memories, are increasingly studied for emerging topics such as brain-inspired computing and active photonics. These applications take advantage of the…