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Capping layers are essential for protecting phase change materials (PCMs) used in non-volatile photonics technologies. This work demonstrates how $(ZnS)_{0.8}-(SiO_2)_{0.2}$ caps radically influence the performance of $Sb_{2}S_{3}$ and…
Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase.…
Optical absorbers find uses in a wide array of applications across the electromagnetic spectrum, including photovoltaic and photochemical cells, photodetectors, optical filters, stealth technology, and thermal light sources. Recent efforts…
The incorporation of dilute concentrations of bismuth (Bi) into traditional III V alloys leads to significant reduction in bandgap energy, making InSbBi is a promising candidate for long wavelength infrared photodetection sensors due to its…
Thickness uniformity is regarded as an important parameter in designing thin film devices. However, some applications based on films with non-uniform thickness have recently emerged, such as gas sensors and optimized materials based on the…
We study a highly controllable perfect plasmonic absorber -- a thin metamaterial layer which possess balanced electric and magnetic responses in some frequency range. We show that this regime is compatible with both metal-backed variant of…
The unique optical properties of two-dimensional layered materials are attractive for achieving increased functionality in integrated photonics. Owing to the van der Waals nature, these materials are ideal for integrating with nanoscale…
By means of ab-initio time dependent density functional theory calculations carried out on an prototypical hybrid plasmonic device (two metallic nanoparticles bridged by a one-atom junction), we demonstrate the strong interplay between…
We have investigated change in the electronic structures of atomically-controlled La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films as a function of hole-doping level ($x$) in terms of {\it in situ} photoemission spectroscopy (PES) and x-ray…
Optoelectronic components with adjustable parameters, from variable-focal-length lenses to spectral filters that can change functionality upon stimulation, have enormous technological importance. Tuning of such components is conventionally…
Topology and superconductivity, two distinct phenomena offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable energy technologies if system can be found where they coexist.…
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy…
We show that thin dielectric films can be used to enhance the performance of passive atomic mirrors by enabling quantum reflection probabilities of over 90% for atoms incident at velocities ~1 mm/s, achieved in recent experiments. This…
Phase-change materials (PCMs) are increasingly recognised as promising platforms for tunable photonic devices due to their ability to modulate optical properties through solid-state phase transitions. Ultrathin and low-loss PCMs are highly…
Recently, the observation of atomic thin film SnTe with a Curie temperature (Tc) higher than that of the bulk (Chang et. al., Science 353, 274 (2016)) has boosted the research on two-dimensional (2D) ferroic materials tremendously. However,…
Resistive switching in amorphous silicon carbide (a-SiC) films deposited by a single composite target magnetron sputtering process is reported. Switching performance as a function of thickness of the films (50, 100 and 300 nm) as well as…
Atomically controlled crystal growth of thin films has established foundations of nanotechnology aimed at the development of advanced functional devices. Crystallization under non-equilibrium conditions allows engineering of new materials…
Recent studies suggests that in disordered ultrathin films superconducting (SC) state may be intrinsically inhomogeneous. Here we investigate the nature of SC state in ultrathin Nb films, of thickness $d$ ranging from 1.2 nm to 20 nm, which…
The optical properties of phase-change materials (PCM) can be tuned to multiple levels by controlling the transition between their amorphous and crystalline phases. In multi-material PCM structures, the number of discrete reflectance levels…
Inspired by nature, we investigate the short-range order effect on the physical properties of amorphous materials. Amorphous Al2O3 thin films exhibit a higher proportion of their 4-coordinated Al sites close to the surface, causing…