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Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…
Nonreciprocal radiation refers to electromagnetic wave radiation in which a structure provides different responses under the change of the direction of the incident field. Modern wireless telecommunication systems demand versatile…
We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in…
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at…
Superconducting diodes, which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction, are emerging as pivotal components for superconducting electronics. The development of editable…
The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the…
Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes…
Antimonene is a recently discovered two-dimensional semiconductor with exceptional environmental stability, high carrier mobility, and strong spin-orbit interactions. In combination with electric field, the latter provides an additional…
We consider a pair of artificial atoms with different ground state energies. By means of finite element calculations we predict that the ground state energies can be tuned into resonance if the artificial atoms are placed into a flexible…
In the bilayer ReS$ _{2} $ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth of the in-plane vibrational modes, leaving…
We discuss level splitting and sideband transitions induced by a modulated coupling between a superconducting quantum circuit and a nanomechanical resonator. First, we show how to achieve an unconventional time-dependent longitudinal…
Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices. In this letter we report on photoinduced modulation doping…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn…
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change.…
A tunneling field effect transistor based on armchair graphene nanoribbons is studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By introducing a pocket doping region near…
This paper has presented inversely determining the resonant configuration of the bilateral nanostructures for periodic metallic slits with extraordinary optical transmission performance. The topology optimization approach is utilized to…
While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find…
The on-chip integration of nonreciprocal optical devices remains a critical challenge for modern optoelectronics, as conventional magneto-optic approaches suffer from material incompatibility and excessive optical losses. Nonlinear photonic…
Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the…