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Functional materials with high electrical conductivity and optical transmittance are vital for thermally tunable free-space photonic systems. Conventional transparent conductors such as graphene and indium tin oxide are limited by high…

In conventional metals, thermal transport is governed by electrons, with phonon contributions often considered negligible. Here, through rigorous first-principles calculations, we uncover a phonon-dominated thermal transport regime in the…

Materials Science · Physics 2026-01-13 Xianyong Ding , Xin Jin , Dengfeng Li , Jing Fan , Peng Yu , Xiaoyuan Zhou , Xiaolong Yang , Rui Wang

Self-limiting assembly of particles represents the state-of-the-art controllability in nanomanufacturing processes where the assembly stops at a designated stage1,2, providing a desirable platform for applications requiring delicate…

Atomic and Molecular Clusters · Physics 2021-11-02 Liang Zhao , Bchara Sidnawi , Jichao Fan , Ruiyang Chen , Thomas Scully , Scott Dietrich , Weilu Gao , Qianhong Wu , Bo Li

We report experimental evidence of surface dominated transport in single crystalline nanoflake devices of topological insulator Bi1.5Sb0.5Te1.8Se1.2. The resistivity measurements show dramatic difference between the nanoflake devices and…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 Bin Xia , Peng Ren , Azat Sulaev , Peng Liu , Shun-Qing Shen , Lan Wang

Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good…

Mesoscale and Nanoscale Physics · Physics 2025-01-24 Giulio Senesi , Katarzyna Skibinska , Alessandro Paghi , Gaurav Shukla , Francesco Giazotto , Fabio Beltram , Stefan Heun , Lucia Sorba

High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with…

We report transport properties of single-crystalline Pd$_{3}$Bi$_{2}$S$_{2}$, which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological…

Materials Science · Physics 2018-04-27 Shubhankar Roy , Arnab Pariari , Ratnadwip Singha , Biswarup Satpati , Prabhat Mandal

Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we…

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…

Atomic layer deposition (ALD), a layer-by-layer controlled method to synthesize ultrathin materials, provides various merits over other techniques such as precise thickness control, large area scalability and excellent conformality. Here we…

We report on growth of high-aspect-ratio ($\gtrsim300$) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at…

Materials Science · Physics 2009-08-05 Sh. Farhangfar , R. B. Yang , M. Pelletier , K. Nielsch

Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…

Mesoscale and Nanoscale Physics · Physics 2016-07-04 Prosper Ngabonziza , Martin P. Stehno , Hiroaki Myoren , Viola A. Neumann , Gertjan Koster , Alexander Brinkman

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…

Mesoscale and Nanoscale Physics · Physics 2011-12-12 B. Sacepe , J. B. Oostinga , J. Li , A. Ubaldini , N. J. G. Couto , E. Giannini , A. F. Morpurgo

Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from…

Overcoming the limitations of current nanofabrication techniques to achieve nanoscale feature sizes is essential for achieving new regimes of light-matter interactions at extreme frequencies and length scales. Here, we demonstrate a…

Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si…

Materials Science · Physics 2022-04-27 H. C. Jacks , M. Molina-Ruiz , M. H. Weber , J. J. Maldonis , P. M. Voyles , T. H. Metcalf , X. Liu , F. Hellman

Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate…

In the past decade, nanopores have been developed extensively for various potential applications, and their performance greatly depends on the surface properties of the nanopores. Atomic layer deposition (ALD) is a new technology for…

Mesoscale and Nanoscale Physics · Physics 2013-09-24 Ceming Wang , Delin Kong , Qiang Chen , Jianming Xue

Superconducting properties of thin films can be vastly different from those of bulk materials. Seminal work has shown the critical temperature Tc of elemental superconductors decreases with decreasing film thickness when the normal-state…

Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…