Related papers: High-speed, High-Resolution, Three-Dimensional Ima…
We demonstrate a nondestructive, high-throughput method for observing dislocations in GaN (0001) using phase-contrast microscopy (PCM). The PCM images (359x300 $\mu$m$^2$) analyzed in this study were acquired with an exposure time of 3 ms…
Dislocation in (011)-oriented $\beta$-Ga$_2$O$_3$ substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Transmission XRT reveals dislocations lying on the (001)…
Emerging gallium nitride (GaN) vertical power devices require high-quality GaN crystals with reduced crystal defects, especially threading dislocations (TDs), to harness the high critical electric field and electron mobility of the…
beta-Ga2O3 is a promising material for next-generation power electronics; however, its performance is strongly affected by lattice defects such as dislocations. In this study, we demonstrate three-dimensional (3D) visualization of…
Mechanical properties in crystals are strongly correlated to the arrangement of 1D line defects, termed dislocations. Recently, Dark field X-ray Microscopy (DFXM) has emerged as a new tool to image and interpret dislocations within crystals…
Displacement estimation in optical coherence tomography (OCT) imaging is relevant for several potential applications, e.g. for optical coherence elastography (OCE) for corneal biomechanical characterization. Larger displacements may be…
Defects such as dislocations impact materials properties and their response during external stimuli. Defect engineering has emerged as a possible route to improving the performance of materials over a wide range of applications, including…
Prostate specific membrane antigen (PSMA) positron emission tomography/computed tomography (PET/CT) imaging provides a tremendously exciting frontier in visualization of prostate cancer (PCa) metastatic lesions. However, accurate…
Scanning tunneling microscopy is the method of choice for characterizing charge density waves by imaging the variation in atomic-scale contrast of the surface. Due to the measurement principle of scanning tunneling microscopy, the…
Atomic level defects such as dislocations play key roles in determining the macroscopic properties of crystalline materials. Their effects are important and wide-reaching, and range from increased chemical reactivity to enhanced mechanical…
Differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM) maps projected electric fields through the phase sensitivity of segmented low-angle detectors. Although typically applied to atomic-resolution…
Electron cryo-tomography (cryo-ET) enables 3D imaging of complex, radiation-sensitive structures with molecular detail. However, image contrast from the interference of scattered electrons is nonlinear with atomic density and multiple…
Dislocations in a thick ammonothermal GaN substrate were investigated using synchrotron-radiation X-ray topography (SR-XRT) under six-beam diffraction conditions. The high brilliance of the synchrotron source enabled the observation of the…
In Part I of this diptych, we outline the parallel mode of differential phase contrast (TEM-DPC), which uses real-space distortion of Fresnel images arising from electrostatic or magnetostatic fields to quantify the phase gradient of…
Coherent diffraction imaging enables the imaging of individual defects, such as dislocations or stacking faults, in materials.These defects and their surrounding elastic strain fields have a critical influence on the macroscopic properties…
Dislocations in ceramics have recently gained renewed research interest, in contrast to the traditional belief that ceramics are inherently brittle. Understanding dislocation mechanics in representative oxides is beneficial for effective…
We propose a new approach for reconstructing the 3D spatial distribution of small dislocation loops (DLs) from 2D TEM micrographs. This method is demonstrated for small DLs in tungsten, formed by low-dose ion-implantation, that appear as…
Stacking orders and topological defects substantially influence the physical properties of 2D van der Waals (vdW) materials. However, the inherent features of 2D materials challenge the effectiveness of single characterization techniques in…
Correlations between dislocations in crystals reduce the elastic energy via screening of the strain by the surrounding dislocations. We study the correlations of threading dislocations in GaN epitaxial films with dislocation densities of…
\b{eta}-Ga2O3 is a promising candidate for next-generation semiconductors, but is limited by its intrinsic brittleness, which hinders its application in flexible electronics and high-precision devices. This study explores a new approach to…