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As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…

A prominent characteristic of write operation in Phase-Change Memory (PCM) is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content…

PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…

DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

Non-volatile memory (NVM) technologies suffer from limited write endurance. To address this challenge, we propose Predict and Write (PNW), a K/V-store that uses a clustering-based machine learning approach to extend the lifetime of NVMs.…

Phase-change memory (PCM) is a promising non-volatile solid-state memory technology. A PCM cell stores data by using its amorphous and crystalline states. The cell changes between these two states using high temperature. However, since the…

A write-once memory (wom) is a storage medium formed by a number of ``write-once'' bit positions (wits), where each wit initially is in a `0' state and can be changed to a `1' state irreversibly. Examples of write-once memories include SLC…

Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…

Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…

Write disturbance error (WDE) appears as a serious reliability problem preventing phase-change memory (PCM) from general commercialization, and therefore several studies have been proposed to mitigate WDEs. Verify-and-correction (VnC)…