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We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…

We propose a new Write-Once-Memory (WOM) coding scheme based on source polarization. By applying a source polarization transformation on the to-be-determined codeword, the proposed WOM coding scheme encodes information into the bits in the…

\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…

This letter analyzes the scaling property of nanowire (NW) phase change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely-used NW PCM peration schemes (constant electric field, voltage, and…

Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…

Poor DRAM technology scaling over the course of many years has caused DRAM-based main memory to increasingly become a larger system bottleneck. A major reason for the bottleneck is that data stored within DRAM must be moved across a…

Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…

Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM…

In the era of artificial intelligence (AI), Transformer demonstrates its performance across various applications. The excessive amount of parameters incurs high latency and energy overhead when processed in the von Neumann architecture.…

The increasing prevalence and growing size of data in modern applications have led to high costs for computation in traditional processor-centric computing systems. Moving large volumes of data between memory devices (e.g., DRAM) and…

Processing-in-memory (PIM) architectures bring computation closer to data, reducing the processor-memory transfer bottleneck in traditional processor-centric designs. Novel hardware solutions, such as UPMEM's in-memory processing…

Although we may be at the end of Moore's law, lowering chip power consumption is still the primary driving force for the designers. To enable low-power operation, we propose a resonant energy recovery static random access memory (SRAM). We…

With the recent advances in optical phase change material (PCM), photonic in-memory neurocomputing has demonstrated its superiority in optical neural network (ONN) designs with near-zero static power consumption, time-of-light latency, and…

Today's systems are overwhelmingly designed to move data to computation. This design choice goes directly against at least three key trends in systems that cause performance, scalability and energy bottlenecks: (1) data access from memory…

Processing-in-cache (PiC) and Processing-in-memory (PiM) architectures, especially those utilizing bit-line computing, offer promising solutions to mitigate data movement bottlenecks within the memory hierarchy. While previous studies have…

Indexing is a well-known database technique used to facilitate data access and speed up query processing. Nevertheless, the construction and modification of indexes are very expensive. In traditional approaches, all records in the database…

Dedicated hardware implementations of spiking neural networks that combine the advantages of mixed-signal neuromorphic circuits with those of emerging memory technologies have the potential of enabling ultra-low power pervasive sensory…

Modern computing devices employ High-Bandwidth Memory (HBM) to meet their memory bandwidth requirements. An HBM-enabled device consists of multiple DRAM layers stacked on top of one another next to a compute chip (e.g. CPU, GPU, and FPGA)…

The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM…

Phase-change memory (PCM) devices have multiple banks to serve memory requests in parallel. Unfortunately, if two requests go to the same bank, they have to be served one after another, leading to lower system performance. We observe that a…