Related papers: Hidden integer quantum ferroelectricity in chiral …
Ferroelectrics remain in the focus of scientific attention for decades owing to their fundamental and practical appeal. Recently, ferroelectricity has been demonstrated in semiconducting halide perovskites, offering both a rare combination…
Ferroelectric metals, characterized by the coexistence of ferroelectricity and metallic conductivity, present a fundamental challenge due to the screening effect of free charge carriers on the long-range electric dipole order. Existing…
Magnetic susceptibility, specific heat, dielectric, and electric polarization of LiCuFe2(VO4)3 have been investigated. Two sequential antiferromagnetic transitions at TN1 ~ 9.95 K and TN2 ~ 8.17 K are observed under zero magnetic field.…
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize…
Fractional quantum Hall effect (FQHE) is a prime example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order, and time reversal symmetry breaking. Recently, a lattice…
Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it is difficult to achieve due to its special symmetry…
This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to the modelling of ferroelectrics. The description of…
We examine theoretically a possibility of ferroelectricity caused by electronic charge order without inversion symmetry, motivated by layered iron oxides. Quantum electronic models in a paired-triangular lattice are analyzed by utilizing…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
Reducing the dimensions of ferroelectric materials down to the nanoscale has strong implications on the ferroelectric polarization pattern and on the ability to switch the polarization. As the size of ferroelectric domains shrinks to…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
Stacking ferroelectricity (SFE) has been discovered in a wide range of van der Waals materials and holds promise for applications, including photovoltaics and high-density memory devices. We show that the microscopic origin of out-of-plane…
Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the…
In this paper, we re-explore a simple textbook Landau model describing improper ferroelectricity and show that in the limit where both proper and improper instabilities exist and compete, improper ferroelectrics can display switching…
The fractional quantum Hall effect (FQHE) realized in two-dimensional electron systems is explained by the emergent composite fermions (CF) out of ordinary electrons. It is possible to write down explicit wavefunctions explaining many if…
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining…
Fractional Chern insulators (FCI) with crystalline symmetry possess topological invariants that fundamentally have no analog in continuum fractional quantum Hall (FQH) states. Here we demonstrate through numerical calculations on model wave…
The fractional quantum Hall (FQH) state is a topological state of matter resulting from the many-body effect of interacting electrons and is of vast interest in fundamental physics. The experimental observation of topological surface states…
Computing finite temperature properties of a quantum many-body system is key to describing a broad range of correlated quantum many-body physics from quantum chemistry and condensed matter to thermal quantum field theories. Quantum…
Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this…