Related papers: Atomically resolved electron reflectivity at a met…
Combining a precise sputter etching method with subsequent AlO$_x$ growth within an atomic layer deposition chamber enables fabrication of atomically flat lateral patterns of SiO$_2$ and AlO$_x$. The transfer of MoSe$_2$ monolayers onto…
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite…
Polarized neutron reflectivity measurements of a ferromagnetic [(LaMnO$_3$)$_{11.8}$/(SrMnO$_3$)$_{4.4}$]$_6$ superlattice reveal a modulated magnetic structure with an enhanced magnetization at the interfaces where LaMnO$_3$ was deposited…
We study clean, edge-contacted graphene/superconductor interfaces in both the quantum Hall (QH) and zero field regimes. We find that Andreev reflection is substantially stronger than at an interface with a semiconductor two-dimensional…
Van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with…
Resonant x-ray reflectivity of the surface of the liquid phase of the Bi$_{43}$Sn$_{57}$ eutectic alloy reveals atomic-scale demixing extending over three near-surface atomic layers. Due to the absence of underlying atomic lattice which…
We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ alloys lattice-matched to Ge and GaAs substrates. We perform…
We construct the invisible quantum barrier which represents the phenomenon of quantum reflection using the available data. We use the Abel equation to invert the data. The resulting invisible quantum barrier is double-valued in both axes.…
Realizing active metasurfaces with substantial tunability is important for many applications but remains challenging due to difficulties in dynamically tuning light-matter interactions at subwavelength scales. Here, we introduce reversible…
Ab-initio calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. In particular, the effects of interface structure (i.e.…
We develop a simple and reliable analytical model that allows describing the electromagnetic response of all-dielectric metasurfaces consisting of a single-layer array of high-permittivity spherical particles. By combining Mie theory with a…
The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied…
Even something as conceptually simple as adsorption of electronegative adatoms on metal surfaces, where repulsive lateral interactions are expected for obvious reasons, can lead to unanticipated behavior. In this context, we explain the…
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy…
Epitaxial MnTe films have recently seen a spur of research into their altermagnetic semiconducting properties. However, those properties may be extremely sensitive to structural and chemical modifications. We report a detailed investigation…
X-ray absorption spectroscopy and optical reflectance measurements have been carried out to elucidate the evolution of the electronic structure in (Mg$_{1-x}$Al$_{x}$)B$_{2}$ for $\emph{x}$ = 0.0,0.1, 0.2, 0.3, and 0.4. The important role…
Optical metasurfaces have enabled high-speed, low-power image processing within a compact footprint. However, reconfigurable imaging in such flat devices remains a critical challenge for fully harnessing their potential in practical…
As devices are reduced in size, interfaces start to dominate electrical transport making it essential to be able to describe reliably how they transmit and reflect electrons. For a number of nearly perfectly lattice-matched materials, we…
Conical intersections play a pivotal role in excited-state quantum dynamics. Capturing transient molecular structures near conical intersections remains challenging due to the rapid timescales and subtle structural changes involved. We…
The coherent reflectivity of a dense, relativistic, ultra-thin electron layer is derived analytically for an obliquely incident probe beam. Results are obtained by two-fold Lorentz transformation. For the analytical treatment, a plane…