Related papers: CMOS 2.0 -- Redefining the Future of Scaling
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational…
Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, scaling to sub-20nm technologies is proving to be challenging as MOSFETs are…
CMOS Image Sensors are experiencing significant growth due to their capabilities to be integrated in smartphones with refined image quality. One of the major contributions to the growth of image sensors is the innovation brought about in…
At sub-20nm technologies CMOS scaling faces severe challenges primarily due to fundamental device scaling limitations, interconnection overhead and complex manufacturing. Migration to 3D has been long sought as a possible pathway to…
This paper describes Switch 2.0, an open-source modeling platform for planning transitions to low-emission electric power grids, designed to satisfy 21st century grid planning requirements. Switch is capable of long-, medium- and short-term…
In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-die stacking and the dual-sided Monolithic 3D (M3D). Based on…
Quantum computing is experiencing the transition from a scientific to an engineering field with the promise to revolutionize an extensive range of applications demanding high-performance computing. Many implementation approaches have been…
Parallel and monolithic 3D integration directions offer pathways to realize 3D integrated circuits (ICs) but still lead to layer-by-layer implementations, each functional layer being composed in 2D first. This mindset causes challenging…
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…
3D integration, i.e., stacking of integrated circuit layers using parallel or sequential processing is gaining rapid industry adoption with the slowdown of Moore's law scaling. 3D stacking promises potential gains in performance, power and…
For the past four decades, cost and features have driven CMOS scaling. Severe lithography and material limitations seen below the 20 nm node, however, are challenging the fundamental premise of affordable CMOS scaling. Just continuing to…
Silicon-based CMOS technologies are predicted to reach their ultimate limits by the middle of the next decade. Research on nanotechnologies is actively conducted, in a world-wide effort to develop new technologies able to maintain the…
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the…
Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface…
The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable…
Conventional 2D CMOS technology is reaching fundamental scaling limits, and interconnect bottleneck is dominating integrated circuit (IC) power and performance. While 3D IC technologies using Through Silicon Via or Monolithic Inter-layer…
The smart integrated systems of tomorrow would demand a combination of micromechanical components and traditional electronics. On-chip solutions will be the ultimate goal. One way of making such systems is to implement the mechanical parts…
With the advancement of robotics and AI technologies in the past decade, we have now entered the age of autonomous machines. In this new age of information technology, autonomous machines, such as service robots, autonomous drones, delivery…
The end of conventional Dennard scaling and the widening gap between memory bandwidth and arithmetic throughput have made the von Neumann partition a structural bottleneck rather than a transient one. Two-dimensional (2D) materials, with…
Complementary-metal-oxide-semiconductor (CMOS) is the most widely spread technology for integrated circuits fabrication. Each foundry offers different technology nodes that are characterized by the minimum feature size, which is the…