Related papers: 2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schot…
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3…
We report over 3 kV breakdown voltage and ultra-low leakage (011) \b{eta}-Ga2O3 power devices utilizing Schottky barrier engineering and high-permittivity (\k{appa}) dielectric (ZrO2) field plate. The (011) orientation of \b{eta}-Ga2O3…
$\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a…
This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off beyond its already high unipolar figure of merit. The device…
This paper presents vertical (001) oriented $\beta$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a punch-through…
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm…
This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…
This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth of high-quality beta-Ga2O3 and in-situ Ga-assisted etching.…
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…
We report on the growth optimization of intentionally low-doped ($10^{15}$ $cm^{-3}$) high-quality $\beta-Ga_2O_3$ drift layers up to 10 $\mu m$ thick via MOCVD and the fabrication of kilovolt-class field plated Schottky barrier diodes on…
Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…
This work presents electrothermal co-design of vertical \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) to enhance both heat dissipation and high field management in high-power applications. Here, we demonstrate device-level thermal management…
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where…
Non-crystalline thin-film Schottky diodes are cost-effective but often exhibit unreliable electrical characteristics due to material imperfections. In this work, I present a Schottky diode structure utilizing in-situ grown Ta2O5 and ZnO…
A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure…
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report…
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this…
This letter reports high-performance $\mathrm{\beta} Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285…
In this work, we have integrated bismuth zinc niobium oxide (BZN), a high-k dielectric material, in metal-insulator-semiconductor (MIS) and field-plated metal-semiconductor (FP-MS) Schottky barrier diodes on $\beta$-$Ga_2O_3$. This…
This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV…