Related papers: Ge as an orbitronic platform: giant orbital Hall e…
Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in-plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin…
Orbital angular momentum has recently emerged as an important carrier of angular momentum in solids, offering new pathways for spin orbitronic functionality beyond conventional spin transport. Here, we investigate the orbital Hall effect…
Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…
We propose a quantum geometric map for the magnetononlinear Hall effect (MNHE), the planar Hall effect (PHE), and the ordinary Hall effect (OHE). These magnetotransport phenomena originate from the bilinear charge current of Bloch electrons…
Whether orbital polarization propagates has become the most essential question of the blooming orbitronics that aims to generate non-local orbital torque and orbital pumping. Recent theories have suggested a strong orbital Hall effect…
In transition metals and their compounds, the orbital degrees of freedom gives rise to an orbital current, in addition to the ordinary spin and charge currents. We reveal that considerably large spin and anomalous Hall effects (SHE and AHE)…
The spin Hall effect (SHE), in which electrical current generates transverse spin current, plays an important role in spintronics for the generation and manipulation of spin-polarized electrons. The phenomenon originates from spin-orbit…
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…
We demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al2O3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession…
We investigate the orbit-to-charge conversion in YIG/Pt/nonmagnetic material (NM) trilayer heterostructures. With the additional Ru layer on the top of YIG/Pt stacks, the charge current signal increases nearly an order of magnitude in both…
The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic…
Recent findings indicate that orbital angular momentum (OAM) has the capability to induce the intrinsic orbital Hall effect (OHE), which is characterized by orbital Chern number in the orbital Hall insulator. Unlike the spin-polarized…
The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe…
Orbitronics has recently emerged as a very active research topic after several proposals aiming to exploit the orbital degree of freedom for charge-free electronics. In this communication, we investigate orbital transport in selected…
Emergent magnetic fields exerted by topological spin textures of magnets lead to an additional Hall response of itinerant carriers called the topological Hall effect (THE). While THE as a bulk effect has been widely studied, THE driven by…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetisation switching in advanced spintronic devices. Over the past two decades, researchers have primarily focused on enhancing spin…
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms…
The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…