Related papers: Ge as an orbitronic platform: giant orbital Hall e…
We report the absence of orbital Hall magnetoresistance (OMR) in nonmagnet/ferromagnet bilayers, challenging the general assumption that orbital transport mimics spin transport. Despite the observation of giant orbital torques, confirming…
Optoelectronic and nonlinear transport experiments probe the quantum geometric tensor of Bloch states, whose real and imaginary components -- the quantum metric and the Berry curvature -- are typically constrained by symmetry. Here, we show…
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…
Since Edwin Halls groundbreaking discovery of the Hall effect in 1879, magnetism, spin, and quantization have been expanding the scope of Hall effects, continuously driving transformative progress in science and technology. Among them, the…
The orbital contribution to the magnetic properties of Fe in systems of decreasing dimensionality (bulk, surfaces, wire and free clusters) is investigated using a tight-binding hamiltonian in an $s, p,$ and $d$ atomic orbital basis set…
We report systematic measurements of anomalous Hall effect(AHE) and spin orbit torques(SOT) in MnGa/IrMn films,, in which a single MnGa epitaxial layer reveals obvious orbital two-channel Kondo (2CK) effect. As increasing the thickness of…
Fractional quantum Hall effect (FQHE) is a prime example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order, and time reversal symmetry breaking. Recently, a lattice…
Based on the exact muffin-tin orbitals (EMTOs), we developed a first-principles method to calculate the current operators and investigated the anomalous Hall effect in bcc Fe as an example, with which we successfully separated the skew…
Recent observations of quantum anomalous Hall effects in moir\'e systems have revealed the emergence of interaction-driven ferromagnetism with significant orbital contributions. To capture this physics, we extend the modern theory of…
The generation of spin-orbital currents is crucial for advancing energy-efficient spintronic devices. Here, the intricate process involved in the generation and conversion of spin and orbital to charge currents in Zr(t=2, 3, 4.5, 6,…
We present a review of experimental and theoretical studies of the anomalous Hall effect (AHE), focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many…
Transport measurements on thin films of the prototypical altermagnet MnTe have reported conflicting phenomena of anomalous Hall effects (AHE), including opposite signs and thickness-independent resistivity. Here we resolve these…
The nonlinear Hall effect (NHE) can enable rectification and energy harvesting, and its control by external fields, including gate, strain and magnetic field, has been pursued intensively. However, existing tuning pathways rely…
The investigation of orbital angular momentum (OAM) of delocalised Bloch electrons has advanced our understanding of magnetic, transport, and optical phenomena in crystals, drawing widespread interest across various materials science…
Qubits encoded in the spin state of heavy holes confined in Si- and Ge-based semiconductor quantum dots are currently leading the efforts toward spin-based quantum information processing. The virtual absence of spinful nuclei in purified…
The topological Hall effect, driven by the exchange interaction between conduction electrons and topological magnetic textures such as skyrmions, is a powerful probe for investigating the topological properties of magnetic materials.…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enable better energy- delay and voltage performance than traditional MTJ based spin torque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derive the effect…
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both…
We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities obtained…