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This work demonstrates a novel in situ etching technique for $\beta$-Ga$_2$O$_3$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on…

Applied Physics · Physics 2025-10-21 Saleh Ahmed Khan , Ahmed Ibreljic , A F M Anhar Uddin Bhuiyan

The electrical and optical properties of semiconductor materials are profoundly influenced by the atomic configurations and concentrations of intrinsic defects. This influence is particularly significant in the case of $\beta$-$\rm…

Materials Science · Physics 2024-02-08 Mengzhi Yan , Junlei Zhao , Flyura Djurabekova , Zongwei Xu

We experimentally discovered that Al2O3 and MgO exhibit well-pronounced nanometric modifications on the surfaces when irradiated under grazing incidence with 23 MeV I beam, in contrast to normal incidence irradiation with the same ion beam…

The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site…

Materials Science · Physics 2007-09-12 Julien Godet , Sandrine Brochard , Laurent Pizzagalli , Pierre Beauchamp , Jose M. Soler

Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density functional calculations, we propose a model…

Materials Science · Physics 2010-12-14 E. Loginova , S. Maier , I. Stass , N. C. Bartelt , P. J. Feibelman , M. Salmeron , K. F. McCarty

Dislocations are line defects in crystalline solids and often exert a significant influence on the mechanical properties of metals. Recently, there has been a growing interest in using dislocations in ceramics to enhance materials…

Materials Science · Physics 2025-10-28 Haoxuan Wang , Yifan Wang , Xu Liang , Wenshan Yu , Xufei Fang , Shengping Shen

Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various…

Applied Physics · Physics 2020-09-03 M. A. Mastro , J. K. Hite , C. R. Eddy, , M. J. Tadjer , S. J. Pearton , F. Ren , J. Kim

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60{\deg} dislocations in Ge. Using large-scale…

Compared to cubic metals, whose primary slip mode includes twelve equivalent systems, the lower crystalline symmetry of hexagonal close-packed metals results in a reduced number of equivalent primary slips and anisotropy in plasticity,…

Materials Science · Physics 2016-06-15 Mitsuhiro Itakura , Hideo Kaburaki , Masatake Yamaguchi , Tomohito Tsuru

Two-dimensional (2D) materials possess great potential for flexible devices, ascribing to their outstanding electrical, optical, and mechanical properties. However, their mechanical deformation property and fracture mechanism, which are…

We present a systematic study of the effect of crack blunting on subsequent crack propagation and dislocation emission. We show that the stress intensity factor required to propagate the crack is increased as the crack is blunted by up to…

mtrl-th · Physics 2009-10-30 J. Schiøtz , L. M. Canel , A. E. Carlsson

Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (beta-Ga2O3), is a complex process. This paper presents the first study on the process of the defects accumulation in…

Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…

Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which merge the benefits of ferromagnets and antiferromagnets,…

Materials Science · Physics 2026-03-03 Pengqiang Dong , Hanbo Sun , Chao Wu , Ping Li

The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…

We demonstrate the applicability of large-angle convergent-beam electron diffraction (LACBED) for Burgers vector determination in monoclinic $\beta$-Ga$_2$O$_3$. The inner product $g \cdot b$ in this non-orthogonal system can be evaluated…

Materials Science · Physics 2026-04-29 Yoshihiro Sugawara , Yongzhao Yao , Yukari Ishikawa

Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a…

Slip transmission across $\alpha-\beta$ interfaces is of great significance in understanding the strength of $\alpha-\beta$ Ti alloys for aerospace applications. Molecular statics (MS) and molecular dynamics (MD) simulations were conducted…

Materials Science · Physics 2023-09-15 Ali Rida , Satish I. Rao , Jaafar A. El-Awady

Creep of directionally solidified Sn-3Ag-0.5Cu wt.% (SAC305) samples with near-<110> orientation along the loading direction and different microstructural lengthscale is investigated under constant load tensile testing and at a range of…

Applied Physics · Physics 2021-02-03 Tianhong Gu , Christopher M. Gourlay , T. Ben Britton

In this paper we present a simple and effective numerical method which allows a fast Fourier transformation-based evaluation of stress generated by dislocations with arbitrary directions and Burgers vectors if the (site-dependent)…

Materials Science · Physics 2018-04-06 D. V. Berkov , N. L. Gorn