Related papers: Flexible orbital torque device with ultralow switc…

Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated…

Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…

Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant…

The spin Hall effect (SHE) is found to be strong in heavy transition metals (HM), such as Ta and W, in their amorphous and/or high resistivity form. In this work, we show that by employing a Cu-Ta binary alloy as buffer layer in an…

Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…

Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current.…

Stochastic oscillators based on emerging nanodevices are attractive because of their ultra-low power requirement and ability to exhibit stochastic resonance, a phenomenon where synchronization to weak input signals is enabled due to ambient…

Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…

Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet…

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics.…

Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation open new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free…

Current-induced spin-orbit torque (SOT) plays a crucial role in the next-generation spin-orbitronics. Enhancing its efficiency is both fundamentally and practically interesting and remains a challenge to date. Recently, orbital counterparts…

Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…

Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…

Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…

Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…

Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is…

The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies…

Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spin-orbit torques (SOT). Its metallicity, strong perpendicular magnetic…

Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs…