Related papers: SOT-MRAM Bitcell Scaling with BEOL Read Selectors:…

We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications. The in-plane magnetized SOT (i-SOT) MRAM not only enables…

Reconfigurable intelligent surfaces (RISs) have become a promising candidate for the development of future mobile systems. In the context of massive machine-type communications (mMTC), a RIS can be used to support the transmission from a…

The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…

Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…

Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…

Modern large language model workloads put increasing demands on parallel compute capability and on-chip memory capacity, while also stressing fine-grained data movement and synchronization. These trends motivate exploring and designing…

Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…

Multi-objective decision-making problems have emerged in numerous real-world scenarios, such as video games, navigation and robotics. Considering the clear advantages of Reinforcement Learning (RL) in optimizing decision-making processes,…

The landscape of emerging applications has been continually widening, encompassing various data-intensive applications like artificial intelligence, machine learning, secure encryption, Internet-of-Things, etc. A sustainable approach toward…

Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…

The notion of integrated circuit split manufacturing which delegates the front-end-of-line (FEOL) and back-end-of-line (BEOL) parts to different foundries, is to prevent overproduction, piracy of the intellectual property (IP), or targeted…

A key challenge in on-chip interconnect design is to scale up bandwidth while maintaining low latency and high area efficiency. 2D-meshes scale with low wiring area and congestion overhead; however, their end-to-end latency increases with…

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the…

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…

Binary Neural Networks (BNNs) have been shown to be robust to random bit-level noise, making aggressive voltage scaling attractive as a power-saving technique for both logic and SRAMs. In this work, we introduce the first fully programmable…

This paper considers a single-cell massive multiple-input multiple-output (MIMO) system equipped with a base station (BS) that uses one-bit quantization and investigates the energy efficiency (EE) and spectral efficiency (SE) trade-off. We…

This paper proposes a cognitive radio enabled LEO SatCom using RSMA radio access technique with the coexistence of GEO SatCom network. In particular, this work aims to maximize the sum rate of LEO SatCom by simultaneously optimizing the…

Thanks to its superior features of fast read/write speed and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising non-volatile memory (NVM) technology that is suitable for many…

Printed electronics have gained significant traction in recent years, presenting a viable path to integrating computing into everyday items, from disposable products to low-cost healthcare. However, the adoption of computing in these…

In order to meet the needs of high performance computing (HPC) in terms of large memory, high throughput and energy savings, the non-volatile memory (NVM) has been widely studied due to its salient features of high density, near-zero…