Related papers: Broadband on-chip SiN lasers
Upconversion persistent luminescence (UCPL) phosphors that can be directly charged by near-infrared (NIR) light have gained considerable attention due to their promising applications ranging from photonics to biomedicine. However, current…
Directly accessing the middle infrared, the molecular functional group spectral region, via supercontinuum generation processes based on turn-key fiber lasers offers the undeniable advantage of simplicity and robustness. Recently, the…
Light strongly interacts with structures that are of a similar scale to its wavelength; typically nanoscale features for light in the visible spectrum. However, the optical response of these nanostructures is usually fixed during the…
Semiconductor-based surface-enhanced Raman spectroscopy (SERS) substrates, as a new frontier in the field of SERS, are hindered by their poor electromagnetic field confinement, and weak light-matter interaction. Metasurfaces, a class of 2D…
Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency…
Hyperspectral imaging provides high-dimensional spatial-temporal-spectral information revealing intrinsic matter characteristics. Here we report an on-chip computational hyperspectral imaging framework with high spatial and temporal…
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by…
Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium…
A metamaterial composed of thin metallic strips as an efficient broadband absorber in the mid-infrared spectrum is investigated. Here the matching between dielectric and geometrical properties of the individual elements is critical to…
Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement…
The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…
Integrated time-bin-entangled photon-pair source with cavity-enhanced nonlinear optical processes is essential for quantum information technologies. However, microcavities with a high quality factor inherently introduce a trade-off between…
Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and…
We present a theoretical study on the impact of an active optical layer on the emission properties of an ultrathin luminescent film. While the study can be generalized to any material, we focus here on a simple layered medium composed of a…
Titanium doped sapphire (Ti:sapphire) is a laser gain material with broad gain bandwidth benefiting from the material stability of sapphire. These favorable characteristics of Ti:sapphire have given rise to femtosecond lasers and optical…
Phase-sensitive integrated photonic devices are highly susceptible to minor manufacturing deviations, resulting in significant performance inconsistencies. This variability has limited the scalability and widespread adoption of these…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
On-chip integrated light sources are essential for photonic integrated circuits, requiring waveguides to interface various components, from light sources to detectors. Two-dimensional (2D) transition metal dichalcogenide (TMD)…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0…