Related papers: Broadband on-chip SiN lasers
The ability to amplify light within silicon waveguides is central to the development of high-performance silicon photonic device technologies. To this end, the large optical nonlinearities made possible through stimulated Brillouin…
Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Up to date, it remains an open challenge to realize an…
Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile…
On-chip erbium-doped optical amplifiers and lasers are essential for realizing fully integrated active silicon photonic circuits, but their performance has been limited by the low gain of amorphous host materials and the difficulty of…
The interaction of light with subwavelength metallic nano-structures is at the heart of different current scientific hot topics, namely plasmonics, metamaterials and nanoantennas. Research in these disciplines during the last decade has…
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
As an analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has been realized both in plasmonic metamaterial and waveguide structures. Via near-field coupling within unit cells, PIT with broadband…
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic…
Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however,…
We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample…
Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A…
CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in…
Development of high-speed, spatial-mapping spectrometers in the millimeter and far-infrared frequencies would enable entirely new research avenues in astronomy and cosmology. An "on-chip" spectrometer is one such technology that could…
Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies.…
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over…
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of…
Light source is indispensable component in on-chip system. Compared with hybrid or heterogeneous integrated laser, monolithically integrated laser is more suitable for high density photonic integrated circuit (PIC) since the capability of…
All-optical ultrafast switches enabled by artificial materials are considered at the forefront of the next generation of photonic communications and data processing. During the last two decades, the photonic applications, impact, and…