Related papers: Antiferromagnetic Hall-Memristors
Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
Noncollinear antiferromagnets (AFMs) have recently attracted attention in the emerging field of antiferromagnetic spintronics because of their various interesting properties. Due to the noncollinear magnetic order, the localized electron…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching…
Skyrmionic materials hold the potential for future information technologies, such as racetrack memories. Key to that advancement are systems that exhibit high tunability and scalability, with stored information being easy to read and write…
Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the N\'eel vector direction of AFs.…
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…
We report two non-degenerate magnon modes with opposite spins or chiralities in collinearly antiferromagnetic insulators driven by symmetry-governed anisotropic exchange couplings. The consequent giant spin splitting contributes to spin…
Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory…
Noncollinear antiferromagnets have promising potential to replace ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics…
Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
In antiferromagnetic materials the order parameter exhibits resonant modes at frequencies that can be in the terahertz range, making them interesting components for spintronic devices. Here, it is shown that antiferromagnetic resonance can…
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale…
The linear Edelstein effect is a cornerstone phenomenon in spintronics that describes the generation of spin magnetization in response to an applied electric field. Recent theoretical advances have reignited interest in its nonlinear…
Magnetic nanomaterials can be used in the construction of devices for information processing and memory storage. For this purpose, they have to enjoy two contradictory properties, from one side being able of keeping for long time…
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…
Ferroelectric materials hold great potential for alternative memories and computing, but several challenges need to be overcome before bringing the ideas to applications. In this context, the recently discovered link between electric…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal…