Related papers: Defect-Assisted Recombination in Semiconductors an…
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this…
To accurately calculate efficiencies $\eta$ of experimentally produced multijunction solar cells (MJSCs) and optimize their parameters, we offer semi-analytical photoconversion formalism that incorporates radiative recombination,…
Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of the transition, the mechanisms by which such recombination can…
The efficiency of a solar cell is often limited by electron-hole recombination mediated by defect states within the band gap of the photovoltaic (PV) semiconductor. The Shockley-Read-Hall (SRH) model considers a static trap that can…
The Shockley equation (SE), originally derived to describe a p--n junction, was frequently used in the past to simulate current--voltage (j/V) characteristics of organic solar cells (OSC). In order to gain a more detailed understanding of…
The physical process driving low-current non-radiative recombinations in high-quality III-Nitride quantum wells is investigated. Lifetime measurements reveal that these recombinations scale with the overlap of the electron and hole…
The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) is performed for n-type and p-type bases. The case is considered when the Shockley-Read-Hall recombination in the silicon bulk is…
Point defects in semiconductor crystals provide a means for carriers to recombine nonradiatively. This recombination process impacts the performance of devices. We present the Nonrad code that implements the first-principles approach of…
The original Shockley-Read-Hall recombination statistics is extended to include recombination of localized excitations. The recombination is treated as a bimolecular process rather than a monomolecular recombination of excitons. The…
We develop a new approach to calculate the obtainable limit of photoconversion efficiency of tandem solar cells (SCs) and applied it to SCs with both vertical and lateral designs at AM0 and AM1.5 conditions. To get the maximum efficiency,…
In this paper, the transfer matrix method is used to investigate the reflectance properties in a symmetric defective annular photonic crystal (APC) containing semiconductor, high-$T_c$ superconductor and a radial defect layer. Numerical…
The recombination rate in the space charge region (SCR) of a silicon-based barrier structure with long Shockley-Reed-Hall lifetime is calculated theoretically taking into account the concentration gradient of excess electron-hole pairs in…
A theoretical approach to photoconversion efficiency modeling in perovskite p-i-n structures is developed. The results of this modeling compare favorably with the experiment and indicate that the surfaces of the perovskite solar cells (SCs)…
Drift-diffusion model is an indispensable modeling tool to understand the carrier dynamics (transport, recombination, and collection) and simulate practical-efficiency of solar cells (SCs) through taking into account various carrier…
Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which…
The HeH$^+$ cation undergoes dissociative recombination with a free electron to produce neutral He and H fragments. We present calculations using ab initio quantum defects and Fano's rovibrational frame transformation technique, along with…
Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and light-emitting diodes (LEDs). Therefore, a model that can accurately describe and quantify the…
Cross sections are presented for dissociative recombination and electron-impact vibrational excitation of the ArH+ molecular ion at electron energies appropriate for the interstellar environment. The R-matrix method is employed to determine…
The level-resolved radiative recombination (RR) rate coefficients for H-like to Na-like ions from H (Z = 1) up to and including Zn (Z = 30) are studied here. For H-like ions, the quantum-mechanical exact photoionization cross sections for…
The ideality factor determined by measuring the open circuit voltage (VOC) as function of light intensity is often used as a means to identify the dominant recombination mechanism in solar cells. However, applying this Suns-VOC technique to…