Coulomb contribution to Shockley-Read-Hall (SRH) recombination
Materials Science
2025-09-16 v3
Abstract
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase.
Keywords
Cite
@article{arxiv.2310.11823,
title = {Coulomb contribution to Shockley-Read-Hall (SRH) recombination},
author = {Konrad Sakowski and Pawel Strak and Pawel Kempisty and Jacek Piechota and Izabella Grzegory and Piotr Perlin and Eva Monroy and Agata Kaminska and Stanislaw Krukowski},
journal= {arXiv preprint arXiv:2310.11823},
year = {2025}
}
Comments
14 pages, 3 figures