The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) is performed for n-type and p-type bases. The case is considered when the Shockley-Read-Hall recombination in the silicon bulk is determined by the deep level of Fe. It is shown that due to the asymmetry of the recombination parameters of this level the photovoltaic conversion efficiency is increasing in the SC with the n-type base and decreasing in the SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of the solar cells based on α−Si:H−n−Si heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cells characteristics is made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters' values.
@article{arxiv.1506.03132,
title = {Silicon solar cells efficiency analysis. Doping type and level optimization},
author = {A. V. Sachenko and V. P. Kostylyov and M. V. Gerasymenko and R. M. Korkishko and N. R. Kulish and M. I. Slipchenko and I. O. Sokolovskyi and V. V. Chernenko},
journal= {arXiv preprint arXiv:1506.03132},
year = {2015}
}