Related papers: Spin properties in droplet epitaxy-grown telecom q…
Spins of carriers confined in quantum dots (QDs) are promising candidates for qubits due to their relatively long spin relaxation times. However, the electron spin dephasing, primarily driven by hyperfine interactions with nuclear spins,…
We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled QDs…
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared…
We investigate the spin properties of charge carriers in vertically coupled InAs/InAlGaAs quantum dots grown by molecular beam epitaxy, emitting at telecom C-band wavelengths, with a silicon $\delta$-doped layer. Using time-resolved…
We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is…
A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $\mu$m (around 0.8 eV photon energy) is…
A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at…
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…
We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration…
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These…
We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$\mu$m by pump-probe Faraday rotation spectroscopy.…
Matter qubits that maintain coherence over extended timescales are essential for many pursued applications in quantum communication and quantum computing. Significant progress has already been made on extending coherence times of spins in…
We have studied the Faraday rotation and ellipticity signals in ensembles of singly-charged (In,Ga)As/GaAs quantum dots by pump-probe spectroscopy. For degenerate pump and probe we observe that the Faraday rotation signal amplitude first…
We demonstrate first measurements of successful spin generation in crystalline Co$_2$FeSi/MgO/GaAs hybrid structures grown by molecular-beam epitaxy (MBE), with different MgO interlayer thicknesses. Using non-local spin valve and non-local…
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The…
InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…
We examine the influence of crystal growth on the spin-pumping induced inverse spin Hall effect in Fe/Pt bilayers. The morphology of the Fe/Pt interface influences the effective spin mixing conductance. The increase of growth temperature…
We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of…
Photoinduced circular dichroism experiments in an oblique magnetic field allow measurements of Larmor precession frequencies, and so give a precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs…