Related papers: Atomistic study of dislocation formation during Ge…
This paper reports the study of growth kinetics of ion beam sputtered aluminum thin films. Dynamic scaling theory was used to derive the kinetics from AFM measurements. AFM imaging revealed that surface incorporates distinctly different…
We grow Fe film on (4 by 2)-GaAs(100) at low temperature, (~ 130 K) and study their chemical structure by photoelectron spectroscopy using synchrotron radiation. We observe the effective suppression of As segregation and remarkable…
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…
Bi(0001) films with thicknesses up to several bilayers (BLs) are grown on Se-terminated Bi$_2$Se$_3$(0001) surfaces, and low energy electron diffraction (LEED), low energy ion scattering (LEIS) and atomic force microscopy (AFM) are used to…
We have presented the kinetic study of the very initial growth stages of an ultra thin film (40 $\AA$- 150$\AA$) of Ag sputter-deposited on Si(001) substrate containing native oxide using grazing incidence x-ray reflectivity (GIXR)…
Oxidization of a dilute Si(Ge) alloy is modeled using an original protocol based on molecular dynamics simulation and rules for the oxygen insertions. These rules, deduced from ab-initio calculations, favor the formation of SiO_2 against…
We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined…
We explore the growth of {\alpha}-Ta thin films ranging from ultra-thin (2 nm) to thick (250 nm) films grown by sputter epitaxy on c-plane sapphire substrates. We utilized 100 W power with a 32 mTorr sputter pressure at 650 {\deg} substrate…
Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and…
To develop a dislocation-based statistical continuum theory of crystal plasticity is a major challenge of materials science.During the last two decades such a theory has been developed for the time evolution of a system of parallel edge…
We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over…
The domain structures and dislocations in epitaxial thin films of La0.7Ca0.3MnO3 grown on SrTiO3 substrates by pulsed laser deposition were investigated using Bragg-contrast diffraction and high-resolution transmission electron microscopy.…
In film growth on quasicrystalline surfaces, the epitaxy-imposed ordering cannot compete with the stable bulk phases of thick films due to absence of translational order in the structure of the substrate. Energetically, this renders the…
Compression experiments on micron-scale specimens and acoustic emission (AE) measurements on bulk samples revealed that the dislocation motion resembles a stick-slip process - a series of unpredictable local strain bursts with a scale-free…
Large scale molecular dynamics simulations for bidisperse nanoparticle suspensions with an explicit solvent are used to investigate the effects of evaporation rates and volume fractions on the nanoparticle distribution during drying. Our…
Combining various two-dimensional materials into novel van der Waals (vdW) heterostructures has been shown to lead to new emergent quantum systems. A novel heterostructure composed of a vdW topological insulator (TI) such as…
Germanium is the base element in many phase-change materials, i.e. systems that can undergo reversible transformations between their crystalline and amorphous phases. They are widely used in current digital electronics and hold great…
We report evidence of Re and Mo segregation (up to 2.6 at.% and 1 at.%) along with Cr and Co to the dislocations inside of {\gamma}' precipitates in a second generation Ni-based single crystal superalloy, after creep deformation at…
We conduct dislocation dynamics (DD) simulations of Fe periodic single crystals under tensile load at several high strain rates and temperatures. The simulations are enabled by the recent development of temperature-dependent dislocation…
The dynamics of dislocations confined to grain boundaries in a striped system are studied using electroconvection in the nematic liquid crystal N4. In electroconvection, a striped pattern of convection rolls forms for sufficiently high…