Related papers: Simplified Aluminum Nitride Processing for Low-Los…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications…
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the…
Stress-optic modulators are emerging as a necessary building block of photonic integrated circuits tasked with controlling and manipulating classical and quantum optical systems. While photonic platforms such as lithium niobate and silicon…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
Mask-based pattern generation is a crucial step in microchip production. The next-generation extreme-ultraviolet- (EUV) lithography instruments with a wavelength of \SI{13.5}{\nano\meter} is currently under development. In principle, this…
The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation…
Plasmonic nanomaterials offer a direct and effective approach to harnessing solar energy. Specifically, plasmonic semiconductors enable a highly efficient light-to-heat conversion process, outperforming noble metals in stability,…
Constructing precise micro-nano metal patterns on complex three-dimensional (3D) plastic parts allows the fabrication of functional devices for advanced applications. However, this patterning is currently expensive and requires complex…
In the past decade, nanopores have been developed extensively for various potential applications, and their performance greatly depends on the surface properties of the nanopores. Atomic layer deposition (ALD) is a new technology for…
It is a formidable challenge to simultaneously achieve wide gamut, high resolution, high-speed while low-cost manufacturability, long-term stability, and viewing-angle independence in structural colors for practical applications. The…
Fully CMOS-compatible photonic memory holding devices hold a potential in a development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect and high…
Currently, magnetic iron oxide nanoparticles are the only nano-sized magnetic resonance imaging (MRI) contrast agents approved for clinical use, yet commercial manufacturing of these agents has been limited or discontinued. Though there is…
A fabrication process is developed to grow c-axis textured aluminum nitride (AlN) films on the sidewall of single crystal silicon (Si) micro-fins to realize fin bulk acoustic wave resonators (FinBAR). FinBARs enable ultra-dense integration…
We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic…
We report an efficient extension of supercontinuum generation through dispersion engineering of crystalline aluminum nitride (AlN)-on-sapphire waveguides. Using a tailored epitaxial regrowth of AlN epilayers and an optimized fabrication…
We investigate the growth conditions for thin (less than 200 nm) sputtered aluminum (Al) films. These coatings are needed for various applications, e.g. for advanced manufacturing processes in the aerospace industry or for nanostructures…
Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics…
The fabrication processes of silicon nitride photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, we show that propagation loss as low as 0.42 dB/cm can be achieved…
Surface enhanced Raman spectroscopy (SERS) is a useful multidisciplinary analytic technique. However, it is still a challenge to produce SERS substrates that are highly sensitive, reproducible, stable, reusable, and scalable. Here, we…
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of…