Related papers: \beta-Ga2O3-Based Heterojunctions: Exploring Growt…
We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky contacts. Our work…
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected…
Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$…
Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and…
The normal and the superconducting state of two coupled CuO_2 layers in the High-T_c superconductors are investigated by using the bilayer Hubbard model, the FLEX approximation on the real frequency axis and the Eliashberg theory. We find…
We studied the band gap of {\beta}-PtO2 using first-principles calculations based on density functional theory (DFT). The results are obtained within the framework of generalized gradient approximation (GGA), GGA+U, GW and the hybrid…
Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. ZnO…
We calculate the dispersion of a hole in ${\rm CuO_2}$ bilayers and 3D antiferromagnets, using the self-consistent Born approximation (SCBA) to the $t-J$ model. Superconductivity and the symmetry of its order parameter are studied…
Accurate band offsets are essential for predictive continuum modeling of nanostructures such as quantum wells and quantum dots formed in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures. Experimental offset data for these systems…
Surfaces of homoepitaxially grown TiO2-terminated SrTiO3(001) were studied in situ with scanning tunneling microscopy and spectroscopy. By controlling the Ti/Sr ratio, two-dimensional domains of highly ordered linear nanostructures,…
First principles calculations were performed to study the ground state electronic properties of BaFeO3 (BFO) within the density functional theory (DFT). Adopting generalized gradient approximation (GGA) exchange and correlation functional…
The conductance of bulk metal--insulator--metal junctions is evaluated by the Landauer formula using an \textit{ab initio} electronic structure calculated using a plane-waves basis set within density-functional theory (DFT) and beyond,…
Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nano structures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band…
Understanding charge transfer at oxide interfaces is crucial for designing materials with emergent electronic and magnetic properties, especially in systems where strong electron correlations and spin-orbit coupling coexist.…
The electrical characteristics and microstructures of $\beta$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that $\beta$-Ga$_2$O$_3$ SBD devices showed…
$\beta$-Si$_{6-z}$Al$_{z}$O$_{z}$N$_{8-z}$ is a prominent example of systems suitable as hosts for creating materials for light-emitting diodes. In this work, the electronic structure of a series of ordered and disordered…
Superconducting diodes, which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction, are emerging as pivotal components for superconducting electronics. The development of editable…
Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si…
We investigate the structural, electronic, vibrational, power and transport properties of the $\beta$ allotrope of Ga$_2$O$_3$ from first-principles. We find phonon frequencies and elastic constants that reproduce the correct band ordering,…
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…