Related papers: \beta-Ga2O3-Based Heterojunctions: Exploring Growt…
We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid…
We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited high current densities exceeding 2 kA/cm2 at 10 V, with a…
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The…
The ultrawide-bandgap semiconductor $\beta$-Ga2O3 holds exceptional promise for next-generation power electronics and deep-ultraviolet optoelectronics, yet its widespread application is hindered by the lack of cost-effective, high-quality…
Using first-principles calculations, we show that the conduction and valence band energies and their deformation potentials exhibit a non-negligible compositional bowing in strained ternary semiconductor alloys such as InGaAs. The…
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence…
Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point defects in bulk In_0.53Ga_0.47As and for models of the…
We study correlators of insertions along 1/2 BPS line defects in the holographic dual to type IIB string theory in $AdS_3 \times S^3 \times T^4$ with mixed Ramond-Ramond and Neveu Schwarz-Neveu Schwarz three-form flux. These defects break…
Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich…
The spinel cobalt oxide Co3O4 is a magnetic semiconductor containing cobalt ions in Co2+ and Co3+ oxidation states. We have studied the electronic, magnetic and bonding properties of Co3O4 using density functional theory (DFT) at the…
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
Bismuth oxyselenide (Bi$_2$O$_2$Se), a novel quasi-2D charge-carrying semiconductor, is hailed as one of the best emerging platforms for the next generation semiconductor devices. Recent efforts on developing diverse Bi$_2$O$_2$Se…
The recent discovery of orientation-dependent superconductivity in KTaO3-based interfaces has attracted considerable interest, while the underlying origin remains an open question. Here we report a different approach to tune the interfacial…
We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic…
Smooth interfaces and surfaces are beneficial for most (opto)electronic devices based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3/(AlxGa1-x)2O3 heterostructures, whose roughness is ruled by…
An effect of alloying of the monoclinic beta- Ga2O3 with Al2O3 and In2O3 on the photoluminescent, thermoluminescent and persistent luminescent properties of Cr3+ ions has been comprehensively investigated. For this purpose, various series…
Recent results on electrons and holes doped CuO 2 planes confirm the marked covalency of CuO bonding, suggesting a band picture of long and short range antiferromagnetism. The maxima of superconductive T c versus doping can be related to…
We report the growth of $\alpha-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $\alpha-Ga_2O_3$…
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled…