Related papers: Ultrafast non-volatile rewritable ferroaxial switc…
The influence of long-range dipole interactions on two dimensional magnetism has been studied extensively in the spin-reorientation transition of ferromagnetic ultrathin films. Although there is a great deal of experimental information on…
Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biaxial anisotropy. The reliable switching is due to the…
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…
Artificially induced asymmetric tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
We simulate field-induced nucleation and switching of domains in a three-dimensional model of ferroelectrics with quenched disorder and varying domain sizes. We study (1) bursts of the switching current at slow driving along the hysteresis…
Under a sufficiently high applied electric field, a non-polar antiferroelectric material, such as \ce{PbZrO3}, can undergo a rapid transformation to a polar ferroelectric phase. While this behavior is promising for energy storage and…
Engineering and controlling heat and spin transport on the femtosecond time-scale in spintronic devices opens up new ways to manipulate magnetization with unprecedented speed. Yet the underlying reversal mechanisms remain poorly understood…
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…
Two-dimensional (2D) ferroelectric materials like NbOI$_{2}$ have garnered significant interest, yet their temporal response and synergetic interaction with light remain underexplored. Previous studies on the polarization of oxide…
We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations…
The polar states of uniaxial ferroelectric nanoparticles interacting with a surface system of electronic and ionic charges with a broad distribution of mobilities is explored, which corresponds to the experimental case of nanoparticles in…
Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…
Coupled order parameters in phase-transition materials can be controlled using various driving forces such as temperature, magnetic and electric field, strain, spin-polarized currents and optical pulses. Tuning the material properties to…
We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the position of the oxide constituent is reversibly switched on…
Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…
The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industrial applications. Traditional stabilization approaches, such…
We propose a novel ferroelectric switchable altermagnetism effect, the reversal of ferroelectric polarization is coupled to the switching of altermagnetic spin splitting. We demonstrate the design principles for the ferroelectric…
Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization…