Related papers: Bound States at Semiconductor -- Mott Insulator In…
Conventional theories for Mott insulators involve well-localized electronic orbitals. This picture fails in the presence of topological obstructions in Chern bands which prevent the formation of exponentially localized orbitals and are…
The theory of topological insulators and superconductors has mostly focused on non-interacting and gapped systems. This review article discusses topological phases that are either gapless or interacting. We discuss recent progress in…
We investigate magnetic properties of strongly interacting four component spin-3/2 ultracold fermionic atoms in the Mott insulator limit with one particle per site in an optical lattice with honeycomb symmetry. In this limit, atomic…
Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…
The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with…
It has long been believed that, at absolute zero, electrons can form only one quantum coherent state, a superconductor. Yet, several two dimensional superconducting systems were found to harbor the superinsulating state with infinite…
We prepare a quantum state where each site of an optical lattice is occupied by exactly one molecule. This is the same quantum state as in a Mott insulator of molecules in the limit of negligible tunneling. Unlike previous Mott insulators,…
We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces…
In the absence of a confining potential, the boson Hubbard model in its ground state is known to exhibit a superfluid to Mott insulator quantum phase transition at commensurate fillings and strong on-site repulsion. In this paper, we use…
The interface between superconducting Josephson junction and semiconductor position-based qubit implemented in coupled semiconductor q-dots is described such that it can be the base for electrostatic interface between superconducting and…
For the Mott insulator state of the Fermi-Hubbard model in the strong-coupling limit, we study the interaction between quasi-particles in the form of doublons and holons. Comparing different methods -- the hierarchy of correlations,…
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-resistance, and high-temperature superconductivity in layered…
Motivated by the concept of M\"obius aromatics in organic chemistry, we extend the recently introduced concept of fragile Mott insulators (FMI) to ring-shaped molecules with repulsive Hubbard interactions threaded by a half-quantum of…
Mott insulators with a half-filled band of electrons on the triangular lattice have been recently studied in a variety of organic compounds. All of these compounds undergo transitions to metallic/superconducting states under moderate…
We consider spin-1/2 fermions of mass m with interactions near the unitary limit. In an applied periodic potential of amplitude V and period a, and with a density of an even integer number of fermions per unit cell, there is a second-order…
Localized interface states in abrupt semiconductor heterojunctions are studied within a tight-binding model. The intention is to provide a microscopic foundation for the results of similar studies which were based upon the two-band model…
It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without…
We address linear and nonlinear topological interface states in polariton condensates excited at the interface of the honeycomb and Lieb arrays of microcavity pillars in the presence of spin-orbit coupling and Zeeman splitting in the…
The generalized boundary conditions for the envelope wave function that take into account the real structure of an interface were used to investigate the hole spectrum of the semiconductor quantum dot embedded in an insulator matrix. An…
The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides,…