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Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky…
We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…
We report the experimental observation of $1/f$ fluctuations in three different turbulent flow configurations: the large scale velocity driven by a two-dimensional turbulent flow, the magnetic field generated by a turbulent swirling flow of…
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…
By systematically studying the proton selectivity of free-standing graphene membranes in aqueous solutions we demonstrate that protons are transported by passing through defects. We study the current-voltage characteristics of single-layer…
Low-frequency 1/f noise is ubiquitous, and dominates the signal-to-noise performance in nanodevices. Here we investigate the noise characteristics of single-layer and bilayer graphene nano-devices, and uncover an unexpected 1/f noise…
We show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of graphene. It was found in a systematic study that some gases change the electrical resistance of graphene devices…
With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer…
Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous…
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current…
Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…
We investigate the contribution of charge puddles to the non-vanishing conductivity minimum in disordered graphene flakes at the charge neutrality point. For that purpose, we study systems with a geometry that suppresses the transmission…
Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly…
We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium…
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…
We develop a theory of drag in graphene double layers near charge neutrality. We work in the regime of electron hydrodynamics and account for interlayer correlations of charge puddle disorder. The drag resistivity is expressed in terms of…
We describe the fundamental trade-offs in engineering the mobility, current saturation and ON- OFF ratios in graphene transistors. Surprisingly, the trade-offs arise solely from an asymptotic constraint on the high energy bandstructure and…