Related papers: PdNeuRAM: forming-free, multi-bit Pd/HfO2 ReRAM fo…
Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and…
Due to many limitations of Von Neumann architecture such as speed, memory bandwidth, efficiency of global interconnects and increase in the application of artificial neural network, researchers have been pushed to look into alternative…
A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components, characterized by their simplicity of manufacture,…
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…
A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly…
Neuromorphic computing-modelled after the functionality and efficiency of biological neural systems-offers promising new directions for advancing artificial intelligence and computational models. Photonic techniques for neuromorphic…
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs)…
Due to low power consumption and high-speed performance, superconductor circuit technology has emerged as an attractive and compelling post-CMOS technology candidate. However, the design of dense memory circuits presents a significant…
Rapid progress of artificial neural network applications in recent years has led to the issue of an unprecedented energy consumption. It can be solved by the implementation of energy efficient hardware based on non-von-Neumann…
Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…
Holographic multiple-input multiple-output (HMIMO) is a potential technique for improving spectral efficiency (SE) while maintaining low hardware cost and power consumption. Although conventional alternating optimization (AO) methods are…
DRAM is the primary technology used for main memory in modern systems. Unfortunately, as DRAM scales down to smaller technology nodes, it faces key challenges in both data integrity and latency, which strongly affect overall system…
Deconvolution has been widespread in neural networks. For example, it is essential for performing unsupervised learning in generative adversarial networks or constructing fully convolutional networks for semantic segmentation. Resistive RAM…
Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices,…
Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density.…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
The combination of Oblivious RAM (ORAM) with Trusted Execution Environments (TEE) has found numerous real-world applications due to their complementary nature. TEEs alleviate the performance bottlenecks of ORAM, such as network bandwidth…