Related papers: Structural Hole Traps in III-V Quantum Dots
Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on…
There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers…
A quasi one--dimensional system of trapped, repulsively interacting atoms (e.g., an ion chain) exhibits a structural phase transition from a linear chain to a zigzag structure, tuned by reducing the transverse trap potential or increasing…
We study a tunneling geometry defined by a single point-contact constriction that brings to close vicinity two points sitting at the same edge of a quantum Hall liquid, shortening the trip between the otherwise spatially separated points…
We study the non-equilibrium pattern formation that emerges when magnetically repelling colloids, trapped by optical tweezers, are abruptly released, forming colloidal explosions. For multiple colloids in a single trap we observe a pattern…
We propose to realize quantized discrete kinks with cold trapped ions. We show that long-lived solitonlike configurations are manifested as deformations of the zigzag structure in the linear Paul trap, and are topologically protected in a…
When we consider charged AdS black holes in higher dimensional spacetime and a molecule number density along coexistence curves is numerically extended to higher dimensional cases. It is found that a number density difference of a small and…
We analyze theoretically the effects of electron-electron and electron-phonon interactions in the dynamics of a system of a few electrons that can be trapped to a localized state and detrapped to an extended band state of a small quantum…
Excitons, bound states of electrons and holes, are affected by the properties of the underlying band structure of a material. Defects in lattice systems may trap electronic defect states, to which an electron can be excited to form…
Trapped ion technology has seen advances in performance, robustness, and versatility over the last decade. With increasing numbers of trapped ion groups world-wide, a myriad of trap architectures are currently in use. Applications of…
Using atomistic pseudopotential and configuration-interaction many-body calculations, we predict a metal-nonmetal transition and an excitonic ground state in the InAs/InSb quantum dot (QD) system. For large dots, the conduction band minimum…
Quantum cavities or dots have markedly different properties depending on whether their classical counterparts are chaotic or not. Connecting a superconductor to such a cavity leads to notable proximity effects, particularly the appearance,…
A quantum interference effect is discussed for subgap tunneling over a distance comparable to the coherence length, which is a consequence of ``advanced-advanced'' and ``retarded-retarded'' transmission modes [Altland and Zirnbauer, Phys.…
While engineered quantum systems are a general route to the manipulation of multipartite quantum states, access in a physical system to a continuous quantum phase transition under sufficient control offers the possibility of an intrinsic…
We demonstrate the possibility of topological states for non-Dirac electrons. Specifically it is shown that, because of the $C_{\rm 3}$ crystal symmetry and time reversal symmetry, $p_x$ and $p_y$ orbits accommodated on triangular lattice…
The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O$_2^{2-}$ peroxide defects. The valence band tail states are at least partly characterized by the O-O…
The atomic and electronic structure of the p-type transparent amorphous semiconductor CuI is calculated by ab-initio molecular dynamics. It is found to consist of a random tetrahedrally bonded network. The hole effective mass is found to be…
Ion trap systems are a leading platform for large scale quantum computers. Trapped ion qubit crystals are fully-connected and reconfigurable, owing to their long range Coulomb interaction that can be modulated with external optical forces.…
By means of the variational method and numerical simulations, we demonstrate the existence of stable 3D nonlinear modes, viz. vortex ``bullets'', in the form of pulsed beams carrying orbital angular momentum, that can self-trap in a 2D…
Electron orbits are calculated in solitary two-dimensional axisymmetric electrostatic potential structures, typical of plasma electron holes, in order to establish the conditions for the particles to remain trapped. Analytic calculations of…