Using atomistic pseudopotential and configuration-interaction many-body calculations, we predict a metal-nonmetal transition and an excitonic ground state in the InAs/InSb quantum dot (QD) system. For large dots, the conduction band minimum of the InAs dot lies below the valence band maximum of the InSb matrix. Due to quantum confinement, at a critical size calculated here for various shapes, the single-particle gap Eg becomes very small. Strong electron-hole correlation effects are induced by the spatial proximity of the electron and hole wavefunctions, and by the lack of strong (exciton unbinding) screening, afforded by the existence of fully discrete 0D confined energy levels. These correlation effects overcome Eg, leading to the formation of a bi-excitonic ground state (two electrons in InAs and two holes in InSb) being energetically more favorable (by ∼ 15 meV) than the state without excitons. We discuss the excitonic phase transition on QD arrays in the low dot density limit.
@article{arxiv.cond-mat/0405128,
title = {Metal-nonmetal transition and excitonic ground state in InAs/InSb quantum dots},
author = {Lixin He and Gabriel Bester and Alex Zunger},
journal= {arXiv preprint arXiv:cond-mat/0405128},
year = {2009}
}