Related papers: Structural Hole Traps in III-V Quantum Dots
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is…
We studied a vertical ``quantum dot molecule'', where one of the dots is occupied with electrons and the other with holes. We find that different phases occur in the ground state, depending on the carrier density and the interdot distance.…
We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted…
Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain…
We construct a minimal four-band model for the two-dimensional (2D) topological insulators and quantum anomalous Hall insulators based on the $p_x$- and $p_y$-orbital bands in the honeycomb lattice. The multiorbital structure allows the…
We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters…
We study Coulomb interacting electrons confined in polygonal quantum rings. We focus on the interplay of localization at the polygon corners and Coulomb repulsion. Remarkably, the Coulomb repulsion allows the formation of in-gap states,…
Neutral-atom quantum simulation is susceptible to entanglement between the atom's internal electronic state and its center-of-mass position. In many alkali Rydberg platforms, the 'spin-motion coupling' is exacerbated by the free expansion…
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large…
Recently, there has been a drive towards the realization of topological phases beyond conventional electronic materials, including phases defined in more than three dimensions. We propose a versatile and experimentally realistic approach of…
Ion trap technologies have earned significant attention as potential candidates for quantum information processing due to their long decoherence times and precise manipulation of individual qubits, distinguishing them from other candidates…
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH…
We discuss the formation of crystalline electron clusters in semiconductor quantum dots and of crystalline patterns of neutral bosons in harmonic traps. In a first example, we use calculations for two electrons in an elliptic quantum dot to…
Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility. We discuss recent results, also in view of the Stranski-Krastanow…
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding…
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…
Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113}…
The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition…
We introduce exactly solvable gapless quantum systems in $d$ dimensions that support symmetry protected topological (SPT) edge modes. Our construction leads to long-range entangled, critical points or phases that can be interpreted as…
We examine the properties of a quantum reflection trap when particle-interaction is included. We explore the influence of the particle-interaction on the trapping for different regimes: repulsive particle-interaction and attractive…