Related papers: Structural Hole Traps in III-V Quantum Dots
We analyze the electronic structure of group III-V semiconductors obtained within full potential linearized augmented plane wave (FP-LAPW) method and arrive at a realistic and minimal tight-binding model, parameterized to provide an…
Topology in quantum matter is typically associated with gapped phases. For example, in symmetry protected topological (SPT) phases, the bulk energy gap localizes edge modes near the boundary. In this work we identify a new mechanism that…
We theoretically investigate the trap-assisted formation of complexes in atom-ion collisions and their impact on the stability of the trapped ion. The time-dependent potential of the Paul trap facilitates the formation of temporary…
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and…
At sufficiently low temperatures and high densities, repulsive spherical particles in two-dimensions (2d) form close-packed structures with six-fold symmetry. By contrast, when the interparticle interaction has an attractive anisotropic…
Using first principles calculations, we have demonstrated the creation of multiple quantum states, in the experimentally accessible metal organic framework BHT-Ni. Specifically, quantum spin Hall and quantum anomalous Hall states are…
Quasiparticles represent an intrinsic source of perturbation for superconducting qubits, leading to both dissipation of the qubit energy and dephasing. Recently, it has been shown that normal-metal traps may efficiently reduce the…
The performance of many superconducting devices is degraded in presence of non-equilibrium quasiparticles in the superconducting part. One promising approach towards their evacuation is the use of normal-metal quasiparticle traps, where…
The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI…
In gravitational collapse leading to black hole formation, trapping horizons typically develop inside the contracting matter. Classically, an ingoing trapping horizon moves towards the centre where it reaches a curvature singularity, while…
Hybrid systems of ultracold atoms and trapped ions or Rydberg atoms can be useful for quantum simulation purposes. By tuning the geometric arrangement of the impurities it is possible to mimic solid state and molecular systems. Here we…
Strained coherent heteroepitaxy of III-V semiconductor films such as In$_x$Ga$_{1-x}$As/GaAs has potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other…
The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is…
Fractional quantum Hall-superconductor heterostructures may provide a platform towards non-abelian topological modes beyond Majoranas. However their quantitative theoretical study remains extremely challenging. We propose and implement a…
Topological states of matter are robust quantum phases, characterised by propagating or localised edge states in an insulating bulk. Topological boundary states can be triggered by various mechanisms, for example by strong spin-orbit…
We study the structural and electronic properties of phase III of solid hydrogen using accurate many-electron theories and compare to state-of-the-art experimental findings. The atomic structures of phase III modelled by C2/c-24 crystals…
The theory of electron holes is extended into the quantum regime. The Wigner--Poisson system is solved perturbatively based in lowest order on a weak, standing electron hole. Quantum corrections are shown to lower the potential amplitude…
Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on…
According to theoretical predictions the quasicrystalline (QC) electronic density of states (DOS) must have a rich and fine spiky structure which actually has resulted elusive. The problem with its absence may be related to poor structural…
By breaking the time-reversal-symmetry in three-dimensional topological insulators with introduction of spontaneous magnetization or application of magnetic field, the surface states become gapped, leading to quantum anomalous Hall effect…