Related papers: Variability analysis in memristors based on electr…
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly…
This work investigates the variability of tungsten disulfide (WS$_2$)-based devices by experimental characterization in view of possible application in the field of hardware security. To this aim, a preliminary analysis was performed by…
We demonstrate non-volatile optical functionality by embedding multi-layer $HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such…
We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an…
The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…
Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a…
Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal…
We survey the most important kinds of structural complexity in Prussian blue analogues, their implications for materials function, and how they might be controlled through judicious choice of composition. We focus on six particular aspects:…
Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…
Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next-generation data centers and high performance computing1. Recently,…
Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a…
Emerging non-volatile memories have been proposed for a wide range of applications from easing the von-Neumann bottleneck to neuromorphic applications. Specifically, scalable RRAMs based on Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO) exhibit analog…
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…
A unique set of characteristics are packed in emerging nonvolatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) such as their underlying stochastic switching processes alongside their intrinsic highly nonlinear…