Related papers: Variability analysis in memristors based on electr…
Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M=Mo, W; and X=S, Se)…
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…
Variable-amplitude oscillatory shear tests are emerging as powerful tools to investigate and quantify the nonlinear rheology of amorphous solids, complex fluids and biological materials. Quite a few recent experimental and atomistic…
Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
Reservoir computing is a brain-inspired machine learning framework for processing temporal data by mapping inputs into high-dimensional spaces. Physical reservoir computers (PRCs) leverage native fading memory and nonlinearity in physical…
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…
Optical devices with metastable states controlled with light (optical flip-flops) are needed in data storage, signal processing and displays. Although non-volatile optical memory relying on structural phase transitions in chalcogenide…
Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes…
This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled)…
Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and…
The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
We analyze X-ray light curves of the blazars Mrk 421, PKS 2155-304, and 3C 273 using observations by the Soft X-ray Telescope on board AstroSat and archival XMM-Newton data. We use light curves of length 30-90 ks each from 3-4 epochs for…
Variable resistors were constructed from epitaxial SrRuO3 (SRO), La0.67Sr0.33MnO3 (LSMO) and SrTiO3 layers with perovskite crystal structure. Each layer was patterned separately by lithographic methods. Optimized wet chemical etchants and…